Publications
Affichage de 14711 à 14720 sur 16309
0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate
S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos
2002, pp.101-105. ⟨hal-00152950⟩
Experimental study of hot-electron inelastic scattering rate in p-type InGaAs
D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩
Statics and dynamics in giant magnetostrictive TbxFe1-xFe0.6Co0.4 multilayers for MEMS
Jamal Ben Youssef, Nicolas Tiercelin, Fabienne Petit, Henri Le Gall, Vladimir Preobrazhensky, Philippe Pernod
IEEE Transactions on Magnetics, 2002, 38, pp.2817-2819. ⟨hal-00148689⟩
Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot
Applied Physics Letters, 2002, 80, pp.4151. ⟨hal-00018489⟩
Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?
Xavier Wallart, Catherine Priester, D. Deresmes, Thomas Gehin, Francis Mollot
Applied Physics Letters, 2002, 81, pp.1060-1062. ⟨hal-00018491⟩
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
S.L. Bravina, Eric Cattan, N.V. Morozovsky, Denis Remiens
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.89-94. ⟨hal-00250394⟩
Conception et réalisation d'un amplificateur faible bruit à 2,4 GHz en technologie CMOS fortement submicronique
E. Fall
2002. ⟨hal-00162704⟩
Controlled charge injection in semiconductor nanoparticles
Thierry Melin, D. Deresmes, D. Stievenard
Proceedings of the 2002 Materials Research Society Fall Meeting, 2002, Boston, MA, United States. ⟨hal-00149956⟩
AlGaN/GaN HEMT for RF power applications
Jean-Claude de Jaeger, Z. Bougria, S. Cassette, E. Chartier, Y. Cordier, Gilles Dambrine, E. Delos, M.A. Poisson, S. Delage, B. Dessertenne, D. Ducatteau, M. Elkhou, D. Floriot, Christophe Gaquière, Et Al.
10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy. ⟨hal-00149736⟩