Publications

• Communication dans un congrès

Les transistors à effet de champ pour l'amplification de puissance microonde : état de l'art et perspectives

Jean-Claude de Jaeger

5èmes Journées Microondes et Electromagnétisme, JMET 2002, 2002, Toulouse, France. ⟨hal-00149737⟩

• Article dans une revue

Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Thierry Melin, Vincent Senez, Didier Stiévenard

We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process versus the temperature of the thermal annealing, the thickness of the top…

Journal of Applied Physics, 2002, 91, pp.106-111. ⟨10.1063/1.1420761⟩. ⟨hal-00149668⟩

• Article dans une revue

Interpretation and theory of tunneling experiments on single nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance using an extension of the theory of single charge tunneling. We analyze…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.165334/1-14. ⟨10.1103/PhysRevB.65.165334⟩. ⟨hal-00149663⟩

• Autre publication scientifique

Microcapteurs de rayonnement infrarouge en technologie silicium

Mohamed Boutchich

2002. ⟨hal-00148731⟩

• Article dans une revue

Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K

Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq

In this paper, thermal properties of phosphorus and boron-doped low pressure chemical vapor deposition (LPCVD) polysilicon layers with regard to sensor applications are presented. Thermoelectric coefficient and relative resistance variations of polysilicon are investigated within the temperature…

IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩

• Communication dans un congrès

Beam forming through the use of electromagnetic band gap materials

Tahsin Akalin, G. Wolf, S. Arscott, Xavier Mélique, Olivier Vanbésien, Eric Estebe, Didier Lippens

25th ESA Antenna Workshop, 2002, Noordwijk, Netherlands. ⟨hal-00148652⟩

• Communication dans un congrès

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proietti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

2002, pp.24-33. ⟨hal-00149685⟩

• Communication dans un congrès

Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology

M. Ardouin, B. Bonte, M. Zaknoune, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger

25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia. ⟨hal-00149713⟩

• Communication dans un congrès

Diffusion d'un élement V à partir d'une surface d'un semiconducteur III-V, influence de la reconstruction et de la morphologie

C. Priester

Journées Surfaces et Interfaces, JSI 2002, 2002, Toulouse, France. ⟨hal-00149684⟩

• Communication dans un congrès

Mise en évidence des effets de pièges sur le comportement électrique de composants HEMTs dans la filière nitrure de gallium

M. Werquin, Christophe Gaquière, Y. Guhel, A. Minko, Virginie Hoel, D. Ducatteau, E. Delos, M.A. Poisson, F. Semond, Jean-Claude de Jaeger

3ème Ecole Thématique CNRS : Matériaux Nitrures d'Elements III, 2002, La Plagne, France. ⟨hal-00149733⟩