Publications

• Communication dans un congrès

HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range

D. Theron, Y. Cordier, X. Wallart, S. Bollaert, M. Zaknoune, B. Bonte, Christophe Gaquière, Michel Rousseau, F. Mollot, A. Cappy, R. Fauquembergue, Jean-Claude de Jaeger

2001, pp.53-56. ⟨hal-00152625⟩

• Communication dans un congrès

PZT films fabricated by the jet deposition of nanoparticles

A. O'Brien, S. Euphrasie, G. Malyavanatham, T. Loue, W. Nichols, M. Becker, D. Kovar, J. Keto, Philippe Pernod

TEXMEMs III Workshop, 2001, Dallas, TX, United States. ⟨hal-00152130⟩

• Article dans une revue

Ionizing radiation study in submicron MOS structures by bipolar operation

H. Bakhtiar, C. Picard, A. Soltani, A. Hoffmann, P. Mialhe, J.P. Charles

ECS Journal of Solid State Science and Technology, 2001, 9, pp.9-21. ⟨hal-00152601⟩

• Communication dans un congrès

Design optimization of low-noise HEMTs

J. Mateos, T. Gonzales, D. Pardo, Virginie Hoel, S. Bollaert, A. Cappy

2001, pp.1777-1778. ⟨hal-00151768⟩

• Communication dans un congrès

On the role of strains in heteroepitaxial growth on twist-bonded layers as substrates

C. Priester, G. Grenet

Novel Index Surfaces, NIS'01, 2001, Aspet, France. ⟨hal-00152577⟩

• Autre publication scientifique

Composants Schottky à hétérostructures de semiconducteurs en technologie InP pour le mélange de fréquences à 560 GHz

Florence Podevin

2001. ⟨hal-00152059⟩

• Communication dans un congrès

A wet etching solution for antimonid-based field effect transistor processing

Hervé Boutry, R. Fauquembergue, Jean-Luc Thobel, François Dessenne

11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152072⟩

• Article dans une revue

Luminescence polarization of silicon nanocrystals

Guy Allan, Christophe Delerue, Yann-Michel Niquet

We consider theoretically the polarization of the luminescence of Si nanocrystals that arises from the anisotropy of the optical moments. No-phonon and phonon-assisted optical transitions are calculated in tight binding and interpreted using effective-mass theory. In contrast to direct-gap…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63, pp.205301/1-8. ⟨10.1103/PhysRevB.63.205301⟩. ⟨hal-00152554⟩

• Communication dans un congrès

Tight binding methods

Christophe Delerue, Guy Allan, Michel Lannoo

Tutorial Courses 'Interface atomic level and properties of advanced materials', 2001, San Feliu de Guixols, Spain. ⟨hal-00152575⟩

• Communication dans un congrès

Positionnement d'une source microonde en présence de trajets multiples

A. Benlarbi-Delai, J.C. Cousin, R. Ringot, A. Mamouni

Actes du Colloque Instrumentation et Interdisciplinarité, C2I'2001, 2001, Paris, France. ⟨hal-00152050⟩