Publications
Affichage de 15031 à 15040 sur 16092
Etude de HEMTs sur GaN
B. Boudart, Christophe Gaquière, Y. Guhel, Virginie Hoel, N. Vellas, M. Werquin, Jean-Claude de Jaeger
GDR Matériaux Grand Gap, 2001, Grenoble, France. ⟨hal-00152669⟩
Investigation of the optical and electro-optical (EO) properties of hexagonal boron nitride thin fims deposited by PECVD technique
A. El Yadouni, A. Soltani, P. Thevenin, A. Bougrioua, A. Bath, J.C. Loulergue
Optical Materials, 2001, 17, pp.319-322. ⟨hal-00152600⟩
Structure électronique et transport dans une jonction moléculaire
Christophe Krzeminski
2001. ⟨hal-00152543⟩
Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy
X. Wallart, D. Deresmes, F. Mollot
Applied Physics Letters, 2001, 78, pp.2961. ⟨hal-00018480⟩
Fermi-edge singularities in AlxGa1-xAs quantum wells: extrinsic versus many-body scattering processes
Yann-Michel Niquet, Christophe Delerue, Michel Lannoo, Guy Allan
Physical Review Letters, 2001, 87, 24, pp.249903. ⟨hal-00018594⟩
On the non top-on-top vertical correlation in multistacked systems : the role of alloy spacer layers
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 12, pp.125312/1-5. ⟨hal-00018657⟩
Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides
X. Wallart, D. Deresmes, F. Mollot
Journal of Crystal Growth, 2001, 227-228, pp.255. ⟨hal-00018481⟩
Noise optimization of ultra-short gate HEMTs using Monte Carlo simulation
J. Mateos, T. Gonzales, D. Pardo, S. Bollaert, T. Parenty, A. Cappy
2001, pp.245-248. ⟨hal-00151775⟩
70nm gate InP-based HEMTs with high ft and fmax
T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy
11th European Heterostructure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00151776⟩