Publications

• Article dans une revue

Adhesive forces investigation on a silicon tip by contact mode atomic force microscope

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot

An atomic force microscope operating in contact mode is used in this letter for probing the adhesive forces at the apex of a silicon nanotip with typical radius smaller than 15 nm, fabricated using a combination of high-resolution electron beam lithography and plasma dry etching. The amplitude of…

Applied Physics Letters, 2002, 81, pp.2623-2625. ⟨10.1063/1.1508806⟩. ⟨hal-00148768⟩

• Communication dans un congrès

Influence of the hole injection layer in thienylene phenylene light emitting diodes

K. Lmimouni, M. Berliocchi, C. Dufour, D. Vuillaume, F. Tran Van, J. Grazulevicius, C. Chevrot, J.P. Lere-Porte, S. Wakim

INF Meeting, 2002, Bari, Italy. ⟨hal-00148713⟩

• Article dans une revue

Reactive ion beam etching effects on maskless PZT properties

Caroline Soyer, Eric Cattan, Denis Remiens

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT…

Integrated Ferroelectrics, 2002, 48, pp.221-229. ⟨10.1080/10584580215465⟩. ⟨hal-00149624⟩

• Chapitre d'ouvrage

Noise modeling and measurement techniques in deep submicron SOI devices

Francois Danneville, Gilles Dambrine

Balandin A. Noise and Fluctuations Control in Electronic Devices, American Scientific Publishers, pp.355-365, 2002. ⟨hal-00577023⟩

• Chapitre d'ouvrage

Growth of PbTiO3/Pb[Zr,Ti]O-3 heterostructures by sputtering on Si substrate : influence of a buffer layer on the structural and electrical properties of Pb[Zr,Ti]O-3

Denis Remiens

Pandalai S.G. Crystal growth in thin solid films - Control of epitaxy, Research Signpost, Kerala, India, pp.71-86, 2002. ⟨hal-00577027⟩

• Communication dans un congrès

0.12µm gate length In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

S. Bollaert, X. Wallart, Sylvie Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos

2002, pp.101-105. ⟨hal-00152950⟩

• Article dans une revue

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, 12, pp.121301. ⟨hal-00018482⟩

• Autre publication scientifique

Transport électronique dans l'ADN

T. Heim

2002. ⟨hal-00148694⟩

• Article dans une revue

Statics and dynamics in giant magnetostrictive TbxFe1-xFe0.6Co0.4 multilayers for MEMS

Jamal Ben Youssef, Nicolas Tiercelin, Fabienne Petit, Henri Le Gall, Vladimir Preobrazhensky, Philippe Pernod

IEEE Transactions on Magnetics, 2002, 38, pp.2817-2819. ⟨hal-00148689⟩

• Thèse

Etude et amélioration d'un récepteur pour la norme EDGE, Study and improvement of a receiver for edge standard

Iyad Dayoub

Le but que nous avons poursuivi dans ce travail est l'amélioration des performances des récepteurs destinés au système EDGE. Nous avons développé plus particulièrement deux points : la reconnaissance automatique du type de modulation dans la rafale en cours de réception et l'égalisation…, The purpose, which we pursued in this work, is the improvement of the performances of the receivers intended for the system EDGE. We developed more particularly two points: The automatic recognition of modulation type in the received burst and the channel equalizer. As regards the modulation type…

Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2001. Français. ⟨NNT : 2001VALE0032⟩. ⟨hal-00152911⟩