Publications

Affichage de 15101 à 15110 sur 16256


  • Communication dans un congrès

A wet etching solution for antimonid-based field effect transistor processing

Hervé Boutry, R. Fauquembergue, Jean-Luc Thobel, François Dessenne

11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152072⟩

  • Communication dans un congrès

Integration of RF filters on GaAs substrate

Tadeusz Gryba, A. Haddou, Véronique Sadaune, V. Zhang, Jean-Etienne Lefebvre, El Hadj Dogheche, Eric Cattan, Denis Remiens

2001, pp.57-60. ⟨hal-00151740⟩

  • Article dans une revue

Bonding in skutterudites : combined experimental and theoretical characterization of CoSb3

Isabelle Lefebvre-Devos, M. Lassalle, X. Wallart, Josette Olivier-Fourcade, L. Monconduit, Jean-Claude Jumas

We report on the bonding in skutterudites using the CoSb3 example. The theoretical electronic structure is calculated in both density-functional theory and empirical tight-binding frameworks. It is shown to be in good agreement with x-ray photoemission and photoabsorption experiments, and with Sb…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63 (12), pp.125110/1-7. ⟨10.1103/PhysRevB.63.125110⟩. ⟨hal-00018591⟩

  • Communication dans un congrès

A low vision aid based on a digital logic system

F. Druart, Michel Pommeray, Jean-Claude Kastelik

2001, pp.100-105. ⟨hal-00151722⟩

  • Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q−3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 8, pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00018578⟩

  • Article dans une revue

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy

X. Wallart, D. Deresmes, F. Mollot

Applied Physics Letters, 2001, 78, pp.2961-2963. ⟨hal-00152078⟩