Publications

Affichage de 15111 à 15120 sur 16271


  • Article dans une revue

Determination of the electrical properties of 2.5nm thick silicon-based dielectric films : thermally grown SiOx

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, Jean-Luc Autran

Journal of Non-Crystalline Solids, 2001, 280, pp.69-77. ⟨hal-00152161⟩

  • Communication dans un congrès

Light emitting diodes with thienylene-phenylene copolymers as emission layer

K. Lmimouni, C. Dufour, D. Vuillaume, J.P. Lere-Porte, J. Moreau, F. Serein-Spirau, R.A. Silva

7th European Conference on Molecular Electronics, 2001, Kerkrade, Netherlands. ⟨hal-00152181⟩

  • Communication dans un congrès

2-D unstructured numerical simulation for acoustic pulse scattering at water-immersed steel plate. Lamb and Scholte-Stonneley waves investigation

L. Derbesse, P. Voinovich, A. Merlen, Philippe Pernod

Proceedings of the 17th International Congress on Acoustics, ICA 2001, 2001, Roma, Italy. ⟨hal-00152121⟩

  • Communication dans un congrès

Premiers résultats de MESFET's GaN réalisés sur substrat slicium (111)

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152908⟩

  • Communication dans un congrès

Organic self-assembled monolayers and nano-field-effect transistors

D. Vuillaume

SPIE's 46th Annual Meeting, 2001, San Diego, CA, United States. ⟨hal-00152182⟩

  • Communication dans un congrès

Transistors organiques : récents développements et résultats

D. Vuillaume

Journées du GDR Matériaux Moléculaires, 2001, Grenoble, France. ⟨hal-00152184⟩

  • Communication dans un congrès

A 5 mW-290 GHz heterostructure barrier tripler in a waveguide configuration

T. David, M. Guillon, S. Arscott, Alain Maestrini, Tahsin Akalin, Benoît Lecomte, Jorge Carbonell, Michel Chaubet, Patrick Mounaix, Gérard Beaudin, Didier Lippens

An output power of 5 mW has been demonstrated at 290 GHz by tripling a primary signal in the W band. The nonlinear devices are high performance InP-based heterostructure barrier varactors mounted in mechanically tuned waveguide harmonic multiplier. The flange-to-flange maximum efficiency was 5%…

2001 IEEE MTT-S International Microwave Symposium Digest, May 2001, Phoenix, AZ, United States. pp.1661-1664, ⟨10.1109/MWSYM.2001.967224⟩. ⟨hal-02347990⟩

  • Article dans une revue

High-speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm

L. Giraudet, Joseph Harari, V. Magnin, P. Pagnod, E. Boucherez, J. Decobert, J. Bonnet-Gamerd, D. Carpentier, C. Jany, F. Blache, Didier Decoster

Electronics Letters, 2001, 37, pp.973-975. ⟨hal-00152492⟩

  • Communication dans un congrès

60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy. ⟨hal-00152631⟩

  • Communication dans un congrès

Du matériau au composant : le modulateur électro-optique à ondes progressives

Didier Decoster, J.F. Larchanche, B. Bellini

Réunion finale CTI Polymères, 2001, Cachan, France. ⟨hal-00152541⟩