Publications

• Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩

• Article dans une revue

Microwave radiometric imaging (MWI) for the characterisation of breast tumours

Stéphane Mouty, Bertrand Bocquet, Roger Ringot, N. Rocourt, Patrick Devos

We have developed a new prototype of microwave radiometric imaging devoted to the measurement of the temperature inside a dissipative media. The main application we are looking for, is the non-invasive thermometry of human tissues. We obtain quite satisfactory results in the early characterisation…

European Physical Journal: Applied Physics, 2000, 10 (1), pp.73-78. ⟨10.1051/epjap:2000121⟩. ⟨hal-00158135⟩

• Article dans une revue

Evidence of polariton stimulation in semiconductor microcavities

F. Boeuf, R. Andre, R. Romestain, S.L. Dang, Emmanuel Peronne, Jean-Francois Lampin, D. Hulin, Antigoni Alexandrou

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62 (4), pp.R2279(R). ⟨hal-00158233⟩

• Article dans une revue

Conical radiating waves in immersed wedges

Anne-Christine Hladky, P. Langlet, M. de Billy

Journal of the Acoustical Society of America, 2000, 108, pp.3079-3083. ⟨hal-00157821⟩

• Article dans une revue

Electron induced dissociation of SiH complexes in hydrogenated Si doped GaAs. Application to the fabrication of microstructures

S. Silvestre, E. Constant, D. Bernard-Loridant, M. Constant, Jacques Chevallier

Superlattices and Microstructures, 2000, 5/6, pp.431-435. ⟨hal-00158581⟩

• Article dans une revue

Microscopic characterization of defects using scanning tunneling microscopy

D. Stievenard

Materials Science and Engineering: B, 2000, B71, pp.120-127. ⟨hal-00158667⟩

• Article dans une revue

Synthesis and microwave characterizations of crosslinked oligoimide

L. Bes, B. Boutevin, A. Rousseau, R. Mercier, B. Bellini, Didier Decoster, J.F. Larchanche, Jean-Pierre Vilcot

Synthetic Metals, 2000, 115, pp.251-256. ⟨hal-00158576⟩

• Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Article dans une revue

Quantum confinement energies in zinc-blende III-V and diamond IV semiconductors

Guy Allan, Yann-Michel Niquet, Christophe Delerue

Blueshift of the band gap due to quantum confinement is calculated in a tight-binding model for a series of nine III–V zinc-blende AB (A=Al, Ga, or In, B=As, P, or Sb) and two diamond group-IV (Si and Ge) semiconductor clusters. Analytic expressions for the highest occupied molecular orbital and…

Applied Physics Letters, 2000, 77, pp.639-641. ⟨10.1063/1.127070⟩. ⟨hal-00158665⟩