Publications
Affichage de 15291 à 15300 sur 16092
Systèmes moléculaires organisés, application aux nano-composants électroniques
Laurent Breuil, Dominique Vuillaume
7èmes Journées de la Matière Condensée, Aug 2000, Poitiers, France. ⟨hal-00158946⟩
GaN MESFETs for power and high temperature applications
B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn
NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩
Ultrasonic cavitation monitoring by acoustic noise power measurement
J. Frohly, S. Labouret, C. Bruneel, I. Looten-Baquet, R. Torguet
Journal of the Acoustical Society of America, 2000, 108, pp.2012-2020. ⟨hal-00159071⟩
Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle
Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq
Journées Micro et Nano Technologies, 2000, Paris, France. ⟨hal-00158491⟩
Génération de maillage automatique pour la simulation tridimensionnelle de procédés de fabrication de circuits intégrés
S. Bozek
2000. ⟨hal-00158499⟩
An analog beam-forming circuit for ultrasound imaging using switched-current delay lines
Bruno Stefanelli, I. O'Connor, L. Quiquerez, Andreas Kaiser, D. Billet
IEEE Journal of Solid-State Circuits, 2000, 35, pp.202-211. ⟨hal-00158512⟩
Alloys effects in skutterudites compounds : theoretical calculations and experimental validations for CoSb3 and Fe0.5Ni0.5Sb3
M. Lassalle, I. Lefebvre-Devos, X. Wallart, J. Olivier-Fourcade, L. Monconduit
2000, pp.B-4. ⟨hal-00158949⟩
Raman characterization of GaN synthetised by N implantation in GaAs substrate
B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt
Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩
Deep traps related effects in GaN MESFET's grown on saphire substrate
A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩