Publications

Affichage de 15321 à 15330 sur 16182


  • Article dans une revue

Indoor 60 GHz radio channel sounding and related T/R module considerations for high data rate communications

Christophe Loyez, N. Rolland, P.A. Rolland, O. Lafond

Electronics Letters, 2001, 37, pp.654-655. ⟨hal-00152025⟩

  • Autre publication scientifique

Etudes technologiques, expérimentales et par simulation pour la commutation optique sur InP

Y. Hernandez

2001. ⟨hal-00152491⟩

  • Article dans une revue

Corrosion thickness gauging in plates using lamb wave group velocity measurements

Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Measurement Science and Technology, 2001, 12, pp.1287-1293. ⟨hal-00152926⟩

  • Article dans une revue

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncali

The adsorption of thienylenevinylene oligomers on the Si(1 0 0) surface has been investigated using scanning tunneling microscopy. The mode of substitution of the thiophene ring exerts a strong influence on the adsorption configurations and the images of the oligomer based on 3,4-dihexyl thiophene…

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473, 1-2, pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00018576⟩

  • Article dans une revue

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls

J-L Farvacque, Z. Bougrioua, I Moerman

Journal of Physics: Condensed Matter, 2000, 12 (49), pp.10213-10221. ⟨10.1088/0953-8984/12/49/321⟩. ⟨hal-02906495⟩

  • Article dans une revue

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

A Stafford, S.J.C Irvine, Z. Bougrioua, K. Jacobs, I Moerman, E.J Thrush, L Considine

Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩. ⟨hal-02906485⟩

  • Article dans une revue

Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, Bahram Djafari-Rouhani, L. Dobrzynski, S. Raghavan

Journal of Applied Physics, 2000, 88 (11), pp.6821-6835. ⟨10.1063/1.1323521⟩. ⟨hal-03301993⟩