Publications
Affichage de 15321 à 15330 sur 16182
Indoor 60 GHz radio channel sounding and related T/R module considerations for high data rate communications
Christophe Loyez, N. Rolland, P.A. Rolland, O. Lafond
Electronics Letters, 2001, 37, pp.654-655. ⟨hal-00152025⟩
Contribution à la caractérisation de transistors à effet de champ hyperfréquences pour l'amplification de puissance
Christophe Gaquière
2001. ⟨hal-00152907⟩
Etudes technologiques, expérimentales et par simulation pour la commutation optique sur InP
Y. Hernandez
2001. ⟨hal-00152491⟩
Corrosion thickness gauging in plates using lamb wave group velocity measurements
Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak
Measurement Science and Technology, 2001, 12, pp.1287-1293. ⟨hal-00152926⟩
Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface
B. Grandidier, J.P. Nys, D. Stievenard, Christophe Krzeminski, C. Delerue, P. Frere, P. Blanchard, J. Roncali
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 473, 1-2, pp.1-7. ⟨10.1016/S0039-6028(00)00946-8⟩. ⟨hal-00018576⟩
Contribution à l’optimisation du contrôle santé intégré par ondes de Lamb : application à la surveillance de structures aéronautiques, Optimization of Lamb wave based health monitoring systems for aeronautical structure inspection
Sébastien Grondel
Electronique. Université de Valenciennes et du Hainaut-Cambrésis, 2000. Français. ⟨NNT : 2000VALE0030⟩. ⟨hal-00159072⟩
Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
J-L Farvacque, Z. Bougrioua, I Moerman
Journal of Physics: Condensed Matter, 2000, 12 (49), pp.10213-10221. ⟨10.1088/0953-8984/12/49/321⟩. ⟨hal-02906495⟩
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
A Stafford, S.J.C Irvine, Z. Bougrioua, K. Jacobs, I Moerman, E.J Thrush, L Considine
Journal of Crystal Growth, 2000, 221 (1-4), pp.142-148. ⟨10.1016/S0022-0248(00)00674-6⟩. ⟨hal-02906485⟩
Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers
Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, Bahram Djafari-Rouhani, L. Dobrzynski, S. Raghavan
Journal of Applied Physics, 2000, 88 (11), pp.6821-6835. ⟨10.1063/1.1323521⟩. ⟨hal-03301993⟩
Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
IEEE Electron Device Letters, 2000, 21 (11), pp.512-514. ⟨10.1109/55.877193⟩. ⟨hal-00158983⟩