Publications
Affichage de 15421 à 15430 sur 16182
Organic self-assembled monolayers on silicon : electronic properties and applications in nanoelectronics and molecular electronics devices
D. Vuillaume
Instituto di ellectronica dello stato solido, 2000, Roma, Italy. ⟨hal-00158486⟩
Organisation et propriétés électroniques de monocouches d'alkylsiloxanes fonctionnalisées par des groupements conjugués
S. Lenfant, J. Collet, D. Vuillaume, A. Bouloussa, F. Rondelez, J. Gay, K. Kham, C. Chevrot
7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158947⟩
Etude de films organiques conducteurs monomoléculaires réalises par auto-assemblage
S. Lenfant, D. Vuillaume
GDR Films Moléculaires Bidimensionnels, 2000, Obernai, France. ⟨hal-00158945⟩
Electronic structure and rectification properties of a molecular diode
Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger
Asia-Pacific Surface and Interface Analysis Conference, APSIAC 2000, 2000, Beijing, China. ⟨hal-00158953⟩
Theory of scanning tunneling microscopy of defects on semiconductors surfaces
X. de La Broïse, C. Delerue, M. Lannoo, B. Grandidier, D. Stievenard
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.2138-2145. ⟨hal-00158951⟩
Design and fabrication of a new optical switch for the synthesis of large time delays
Y. Hernandez, Jean-Pierre Vilcot, Joseph Harari, Didier Decoster, M. Schaller, J. Chazelas
2000, pp.X-15, X-16. ⟨hal-00158580⟩
A 57 GHz radio over fiber transmission using sub-carrier local oscillator generation
Samuel Dupont, Christophe Loyez, Jean-Pierre Vilcot, P.A. Rolland, Didier Decoster
Semiconductor and Integrated Optoelectronics Conference, SIOE 2000, 2000, Cardiff, United Kingdom. ⟨hal-00158600⟩
Surface roughness, strain and alloy segregation in lattice matched heteroepitaxy
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.16029-16032. ⟨hal-00158658⟩
Fabricating conductive microstructures by direct electron beam writing on hydrogenated n-type Si-doped GaAs
S. Silvestre, E. Constant, D. Bernard-Loridant, B. Sieber
Applied Physics Letters, 2000, 19, pp.2731-2733. ⟨hal-00158583⟩
Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si
Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant
Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩