Publications
Affichage de 15541 à 15550 sur 16109
Excitonic and quasiparticle gaps in Si nanocrystals
Christophe Delerue, Michel Lannoo, Guy Allan
CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩
Contribution à la conception et à la réalisation de liaisons radio haut débit intra-bâtiment à 60 GHz
Christophe Loyez
2000. ⟨hal-00157903⟩
Effects of substrate preparation on properties of YBaCuO thin films
A. Dégardin, X. Castel, M. Achani, Maryline Guilloux-Viry, E. Caristan, Yannick Roelens, J.C. Carru, A. Perrin, A. Kreisler
2000, pp.1993-1994. ⟨hal-00157906⟩
Organic semiconductors : application to light emitting diodes and thin film transistors
K. Lmimouni
Université de Rome Tor Vergata, 2000, Roma, Italy. ⟨hal-00158483⟩
AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT
M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier
2000, pp.353-356. ⟨hal-00159004⟩
Microfluidique pour l'introduction des échantillons en ESI/MS
C. Druon, P. Tabourier
2000, pp.11-14. ⟨hal-00158487⟩
A silicon shadow mask for deposition on isolated areas
A. Tixier, Y. Mita, J.P. Gouy, H. Fujita
Journal of Micromechanics and Microengineering, 2000, 10, pp.157-162. ⟨hal-00158497⟩
Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content
Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy
2000, pp.102-105. ⟨hal-00159005⟩
Spatial mapping of electroluminescence due to impact ionization effect in high electron mobility transistors
Christophe Gaquière, B. Boudart, P.A. Dhamlincourt
Applied Spectroscopy, 2000, 54, pp.1423-1428. ⟨hal-00158981⟩
Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
Y. Cordier, D. Ferre, J.M. Chauveau, J. Dipersio
Applied Surface Science, 2000, 166, pp.442-445. ⟨hal-00158436⟩