Publications

• Communication dans un congrès

Ballistic emitter for InP heterojunction bipolar transistors

D. Sicault, S. Demichel, R. Teissier, C. Dupuis, F. Pardo, F. Mollot, J.L. Pelouard

25th International Conference on the Physics of Semiconductors, ICPS-25, 2000, Japan. pp.1781-1782. ⟨hal-00250435⟩

• Article dans une revue

A silicon shadow mask for deposition on isolated areas

A. Tixier, Y. Mita, J.P. Gouy, H. Fujita

Journal of Micromechanics and Microengineering, 2000, 10, pp.157-162. ⟨hal-00158497⟩

• Article dans une revue

Simultaneous generation of longitudinal and shear bulk ultrasonic waves in solids

Jean-Michel Rouvaen, Atika Rivenq, P. Logette, Philippe Goutin, F. Haine

Journal of Physics D: Applied Physics, 2000, 33, pp.1287-1297. ⟨hal-00159053⟩

• Communication dans un congrès

On 2D/3D numerical oxidation modeling : calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations

T. Hoffmann, K.F. Dombrowski, V. Senez

2000, pp.59-62. ⟨hal-00158513⟩

• Communication dans un congrès

Very low-voltage fully differential amplifier for switched capacitor applications

M. Dessouky, A. Kaiser

2000, pp.441-444. ⟨hal-00158508⟩

• Communication dans un congrès

Organic semiconductors : application to light emitting diodes and thin film transistors

K. Lmimouni

Université de Rome Tor Vergata, 2000, Roma, Italy. ⟨hal-00158483⟩

• Communication dans un congrès

Non linear magneto-acoustic excitations in rare-earth multilayer structures

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

The results presented in this paper clearly show the efficiency of nonlinear driving of a planar structure by means of magnetostrictive multilayers near the spin reorientation transition point. The nonlinear effects can be used for low frequency driving of various micromechanical and micro-opto-…

IEEE Ultrasonics Symposium. Proceedings. An International Symposium, Oct 2000, San Juan, PR, United States. pp.847-850, ⟨10.1109/ULTSYM.2000.922675⟩. ⟨hal-00158460⟩

• Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩

• Communication dans un congrès

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00159005⟩