Publications

Affichage de 15611 à 15620 sur 16232


  • Communication dans un congrès

Microsysteme : un état des lieux, enjeux et perspectives

D. Collard, L. Buchaillot, Bernard Legrand

48èmes Journées Nationales de l'Union des Physiciens, 2000, Lille, France. ⟨hal-00158538⟩

  • Communication dans un congrès

On 2D/3D numerical oxidation modeling : calibration and investigation of silicon crystal orientation effect on stresses in shallow trench isolations

T. Hoffmann, K.F. Dombrowski, V. Senez

2000, pp.59-62. ⟨hal-00158513⟩

  • Article dans une revue

A silicon shadow mask for deposition on isolated areas

A. Tixier, Y. Mita, J.P. Gouy, H. Fujita

Journal of Micromechanics and Microengineering, 2000, 10, pp.157-162. ⟨hal-00158497⟩

  • Communication dans un congrès

Very low-voltage fully differential amplifier for switched capacitor applications

M. Dessouky, A. Kaiser

2000, pp.441-444. ⟨hal-00158508⟩

  • Communication dans un congrès

Microsystème : enjeux et perspectives

D. Collard, L. Buchaillot, Bernard Legrand

Journée IMAPS : International Microelectronics and Packaging Society, 2000, Lille, France. ⟨hal-00158539⟩

  • Communication dans un congrès

Impact of inductance on timing characteristics of VLSI interconnects

Gregory Servel, Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht

2000, pp.C17/1-6. ⟨hal-00158602⟩

  • Article dans une revue

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Y. Cordier, D. Ferre, J.M. Chauveau, J. Dipersio

Applied Surface Science, 2000, 166, pp.442-445. ⟨hal-00158436⟩

  • Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩

  • Article dans une revue

Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates

X. Wallart, F. Mollot

Applied Surface Science, 2000, 166, pp.446-450. ⟨hal-00158444⟩

  • Article dans une revue

Determination of the electrical properties of thermally grown ultrathin nitride films

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere

Microelectronics Reliability, 2000, 40, pp.589-592. ⟨hal-00158478⟩