Publications

• Communication dans un congrès

Etude du contact Ti/Al/Ni/Au sur GaN

S. Trassaert, B. Boudart, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

GDR Matériaux Grand Gap, 1998, Villeneuve d'Ascq, France. ⟨hal-01654461⟩

• Communication dans un congrès

A complementary approach to the access design of millimeter power HFETs

Yann Michel Niquet, Stephane Piotrowicz, Bertrand Bonte, X. Hue, S. Trassaert, B. Boudart, Y. Crosnier

A complementary approach to the access design of millimeter power HFETs . 28th European Microwave Conference (EUMC) , 1998, Amsterdam, Netherlands. ⟨hal-01649391⟩

• Chapitre d'ouvrage

Microwave short-range interferometer

A. Benlarbi-Delai, J.C. Cousin, R. Ringot, A. Mamouni, Y. Leroy

MSM (Microsystems), Volume 1, NSTI Publications, Danville, CA USA, pp.637-642, 1998. ⟨hal-00132367⟩

• Article dans une revue

94 GHz pulsed silicon IMPATT oscillator modelling

Stéphane Beaussart, Olivier Perrin, Marie-Renée Friscourt, Christophe Dalle

A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically…

IEEE Transactions on Microwave Theory and Techniques, 1998, 46, pp.1382-1390. ⟨10.1109/22.721139⟩. ⟨hal-00005340⟩

• Article dans une revue

Influence of the operating temperature on the design and utilization of 94 GHz pulsed silicon IMPATT diodes

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have…

IEEE Electron Device Letters, 1998, EDL-19, pp.262-264. ⟨10.1109/55.701437⟩. ⟨hal-00005339⟩

• Proceedings/Recueil des communications

Radio over Fiber Telecommunications Systems : the Key Optoelectronic Devices for the Receiver

Jean-Pierre Vilcot, Manuel Fendler, Filipe Jorge, J. Barette, Vincent Magnin, Sophie Maricot, Didier Decoster

Recent developments in radio over fiber telecommunication systems such as micro- or pico- cellular mobile communications would require specific performance from either optical emitters or receivers . In this paper, we will describe this receiver part, i.e. the optical to micro- or millimeter- wave…

COMPOUND SEMICONDUCTOR POWER TRANSISTORS and STATE- OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 98 (12), THE ELECTROCHEMICAL SOCIETY, INC., pp.257, 1998, 9781566772228. ⟨hal-04452141⟩

• Article dans une revue

Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications

X. Hue, B. Boudart, Y. Crosnier

The etching characteristics of GaAs and Al0.22Ga0.78AsAl0.22Ga0.78As in citric acid/hydrogen peroxide/ammonium hydroxide etching solution were studied. The selectivity of GaAs to Al0.22Ga0.78AsAl0.22Ga0.78As was as high as 200 at 20 °C20 °C (510 at 0 °C0 °C) by optimizing the pHpH and citric acid/…

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16 (5), pp.2675-2679. ⟨10.1116/1.590255⟩. ⟨hal-01644716⟩

• Communication dans un congrès

A multimedia educative tool concerning microwave circuits, based on a physical approach of their time-domain operation

M.R. Friscourt, Christophe Dalle

2nd European Workshop on Microelectronics Education, 1998, Noordwijkerhout, Netherlands. ⟨hal-00005309⟩

• Article dans une revue

Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

G. Grenet, Michel Gendry, M. Oustric, Y. Robach, L. Porte, G. Hollinger, O. Marty, M. Pitaval, C. Priester

The clustering development for lattice-matched A104s ln0.52 As grown on (001) oriented InP substrates by molecular beam epitaxy (MBE) has been investigated by ex-situ transmission electron microscopy (TEM) and in-situ scanning tunnelling microscopy (STM). For a growth temperature of 450°C, a V/III…

Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩. ⟨hal-02194425⟩

• Communication dans un congrès

Study of the Ti/Al/Ni/Au ohmic contact on n-GaN for high temperature applications

S. Trassaert, B. Boudart, Xavier Wallart, Didier Theron, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654296⟩