Publications
Affichage de 15931 à 15940 sur 16182
Second and third order one-dimensional non-quasi-static bipolar transistor models
E. Robilliart, Emmanuel Dubois
Proc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States. ⟨hal-04249098⟩
Analysis of the propagation of plane acoustic waves in passive periodic materials using the finite element method
Philippe Langlet, Anne-Christine Hladky, Jean‐noël Decarpigny
Journal of the Acoustical Society of America, 1995, 98 (5), pp.2792-2800. ⟨10.1121/1.413244⟩. ⟨hal-03300156⟩
Auger and Coulomb Charging Effects in Semiconductor Nanocrystallites
Christophe Delerue, Michel Lannoo, Guy Allan, Évelyne Martin, Irina Mihalcescu, Jean-Claude Aimé Vial, Robert Romestain, F. Muller, Ahmad Bsiesy
Physical Review Letters, 1995, 75 (11), pp.2228 - 2231. ⟨10.1103/PhysRevLett.75.2228⟩. ⟨hal-01628592⟩
Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP
Jean -Louis Leclercq, Pierre Viktorovich, X. Letartre, M. Nuban, Michel Gendry, T. Benyatou, G. Guillot, G. Fierling, C. Priester
Applied Physics Letters, 1995, 67 (9), pp.1301-1303. ⟨10.1063/1.114404⟩. ⟨hal-02119492⟩
HELENA - Hemt Electrical Properties and Noise Analysis Software and user's manual (Microwave Software Library)
H. Happy, A. Cappy
Artech House, pp.Disk edition, 1995. ⟨hal-00132555⟩
Brillouin-zone mapping of the existence conditions for interface bilayer spin waves
H. Puszkarski, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski
Physical Review B, 1995, 51 (22), pp.16008-16015. ⟨10.1103/PhysRevB.51.16008⟩. ⟨hal-04070291⟩
Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect
Irina Mihalcescu, Jean-Claude Aimé Vial, Ahmad Bsiesy, F. Muller, Robert Romestain, Évelyne Martin, Christophe Delerue, Michel Lannoo, Guy Allan
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 51 (24), pp.17605 - 17613. ⟨10.1103/PhysRevB.51.17605⟩. ⟨hal-01628598⟩
Electronic surface states in GaAs/Ga1 − xAlxAs superlattice: effect of surface location
M Stȩślicka, Róża Kucharczyk, Eh El Boudouti, B Djafari-Rouhani, Ml Bah, Abdellatif Akjouj, Leonard Dobrzynski
Vacuum, 1995, 46 (5-6), pp.459-463. ⟨10.1016/0042-207X(94)00106-5⟩. ⟨hal-04070869⟩
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
Francois Danneville, Gilles Dambrine, Henri Happy, Patrick Tadyszak, A. Cappy
Solid-State Electronics, 1995, 38 (5), pp.1081-1087. ⟨10.1016/0038-1101(95)98678-V⟩. ⟨hal-03612883⟩
Surface and interface s-polarized optical waves in superlattices
Abdellatif Akjouj, Ml Bah, Ehel Boudouti, B Djafari-Rouhani, Leonard Dobrzynski
Vacuum, 1995, 46 (5-6), pp.621-624. ⟨10.1016/0042-207X(94)00144-8⟩. ⟨hal-04070921⟩