Publications

• Article dans une revue

Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

G. Grenet, Michel Gendry, M. Oustric, Y. Robach, L. Porte, G. Hollinger, O. Marty, M. Pitaval, C. Priester

The clustering development for lattice-matched A104s ln0.52 As grown on (001) oriented InP substrates by molecular beam epitaxy (MBE) has been investigated by ex-situ transmission electron microscopy (TEM) and in-situ scanning tunnelling microscopy (STM). For a growth temperature of 450°C, a V/III…

Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩. ⟨hal-02194425⟩

• Communication dans un congrès

Study of the Ti/Al/Ni/Au ohmic contact on n-GaN for high temperature applications

S. Trassaert, B. Boudart, Xavier Wallart, Didier Theron, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654296⟩

• Article dans une revue

A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design

Gilles Dambrine, J.-M. Belquin, Francois Danneville, A. Cappy

IEEE Transactions on Microwave Theory and Techniques, 1998, 46 (9), pp.1231-1236. ⟨10.1109/22.709461⟩. ⟨hal-03612815⟩

• Article dans une revue

Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Francois Danneville, Gilles Dambrine, A. Cappy

IEEE Transactions on Electron Devices, 1998, 45 (10), pp.2207-2212. ⟨10.1109/16.725255⟩. ⟨hal-03612813⟩

• Article dans une revue

Bromine/methanol wet chemical etching of via holes for InP microwave devices

S. Trassaert, B. Boudart, Stephane Piotrowicz, Y. Crosnier

We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 μμm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit.…

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16, pp.561-564. ⟨10.1116/1.589863⟩. ⟨hal-01644706⟩

• Communication dans un congrès

Optimization of GaAs/Al0.22Ga0.78As HFET gate recess for the realization of linear power amplifier

X. Hue, B. Boudart, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654297⟩

• Article dans une revue

Micromachining techniques at terahertz frequencies

S. Arscott, R.E. Miles, S.J. Milne

IEE Proceedings - Circuits, Devices and Systems, 1998, 145 (5), pp.335. ⟨10.1117/12.361055⟩. ⟨hal-02348103⟩

• Communication dans un congrès

Simulation globale du fonctionnement à 94 GHz d'un oscillateur ATT pulsé, basée sur le couplage de modèles physique, électrique, thermique et électromagnétique

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

Workshop MTT, chapitre français, 1998, La Rochelle, France. ⟨hal-00005310⟩

• Communication dans un congrès

Miniaturized deformable magnetic mirror for adaptive optics

Skandar Basrour, J. Boussey-Said, O. Cugat, C. Divoux, P. Mounaix, P. Kern

An alternative approach to more compact deformable mirrors for adaptive optics is developed. A thin and flexible reflective membrane is coated with a magnetic layer and locally deformed by the field created by an array of planar microcoils. This novel technology should enable higher resolution with…

Int. Symp. on Astronomical Telescopes and Instrumentation., 1998, Kona, Hawaii, France. pp.850-857. ⟨hal-00009140⟩

• Article dans une revue

An Accurate Dual-Gate HFET Nonlinear Model for Millimeter-Wave MMIC Design

Rachid Allam, Christophe Kolanowski, J. C. De Jaeger, Y. Crosnier

An accurate nonlinear model for dual-gate HFETs is presented in this paper. Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is…

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1998, 1998 (4), pp.315--320. ⟨10.1002/(SICI)1099-047X(199807)8:43.0.CO;2-E⟩. ⟨hal-03360875⟩