Publications

Affichage de 16041 à 16050 sur 16549


  • Communication dans un congrès

Deep traps related effects in GaN MESFET's grown on saphire substrate

A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩

  • Communication dans un congrès

Dry etching for gate recessing on AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩

  • Communication dans un congrès

GaN MESFETs for power and high temperature applications

B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn

NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩

  • Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩

  • Article dans une revue

An analog beam-forming circuit for ultrasound imaging using switched-current delay lines

Bruno Stefanelli, I. O'Connor, L. Quiquerez, Andreas Kaiser, D. Billet

IEEE Journal of Solid-State Circuits, 2000, 35, pp.202-211. ⟨hal-00158512⟩

  • Communication dans un congrès

Acoustic wave phase conjugation in active media - Numerical simulations

A. Merlen, S. Ben-Khelil, Vladimir Preobrazhensky, Philippe Pernod

IUTAM Symposium on Diffraction and Scattering in Fluid Mechanics and Elasticity, 2000, United Kingdom. pp.133-140. ⟨hal-00250440⟩

  • Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩