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Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Thomas Bordignon, Blandine Duriez, Nicolas Guitard, Romain Duru, Clément Pribat, Jérôme Richy, Shay Reboh, Siddhartha Dhar, Frédéric Monsieur, Thibaud Fache, Zdenek Chalupa, Jean-Michel Hartmann, Pascal Chevalier, Yannick Roelens, Francois Danneville, Sébastien Crémer

A new method to induce tensile stress in a PDSOI NMOS device for RF applications is proposed, which is based on relaxing a SiGe layer built underneath silicon. By means of TCAD simulations, we demonstrate that stress transfer from SiGe to Si occurs by means of at least two different mechanisms:…

Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩. ⟨hal-04253696⟩