Publications

Affichage de 1861 à 1870 sur 16064


  • Poster de conférence

A sensor for manipulation of heat carried by phonons at the nanoscale and very low temperature

Boris Brisuda, Jon Canosa Diaz, Jean-François Robillard, Laurent Saminadayar, Olivier Bourgeois, Carlos Polanco Garcia, Natalio Mingo, Victor Doebele, Thierry Crozes

GDR NAME plenary days, Oct 2022, Lyon, France. ⟨hal-04705878⟩

  • Article dans une revue

Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, N. Defrance, Christophe Gaquière, Fred Gaillard, Erwan Morvan

We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor…

IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. ⟨10.1109/TED.2022.3201837⟩. ⟨hal-03775876⟩

  • Communication dans un congrès

Études à la nano-échelle des échantillons de l’astéroïde Ryugu : Caractérisation des effets d’altération spatiale par microscopie électronique

Sylvain Laforet, Hugues Leroux, Corentin Le Guillou, Francisco de la Peña, Maya Marinova, Damien Jacob, Jean-Christophe Viennet, Bahae-Eddine Mouloud, Daniel Hallatt, Adrien Teurtrie, Mario Pelaez Fernandez, Mike Walls, L. Galvao-Tizei, David Troadec

Matériaux 2022, Oct 2022, LILLE, France. ⟨hal-04266362⟩

  • Article dans une revue

Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.

Benoît Manchon, Greta Segantini, Nicolas Baboux, Pedro Rojo Romeo, Rabei Barhoumi, Dominique Drouin, Infante Ingrid C., F. Alibart, Bertrand Vilquin, Damien Deleruyelle

Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by reactive magnetron sputtering is investigated. The oxidation of the interfacial layer during annealing due to scavenging of the Hf0.5Zr0.5O2…

physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩. ⟨hal-03609773⟩

  • Article dans une revue

Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction

L. Djedoui, A. Aissat, A. Djemouai, Jean-Pierre Vilcot

Digest Journal of Nanomaterials and Biostructures , 2022, 17 (4), pp.1191-1202. ⟨10.15251/DJNB.2022.174.1191⟩. ⟨hal-03853191⟩