Publications

Affichage de 191 à 200 sur 16074


  • Communication dans un congrès

Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Mohammed El Amrani, Thibaud Guillemin, Maroun Dagher, Vishwajeet Maurya, Florian Bartoli, Eric Frayssinet, Farid Medjdoub, Julien Buckley, Yvon Cordier, Matthew Charles, Dominique Planson, Cyril Buttay

Vertical GaN power devices counters the drawbacks of the lateral ones. The best performances are observed with vertical GaN-on-GaN, but the absence of large GaN substrates makes the homoepitaxy option less marketable than the heteroepitaxy one. However, thick heteroepitaxial GaN drift layers must…

ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden. ⟨hal-05097968⟩

  • Communication dans un congrès

Thermal properties of nano-objects by means of scanning thermal microscopy

Antonin Massoud, Valeria Lacatena, Maciej Haras, Christian Mateo Frausto-Avila, Jose Manuel Sojo Gordillo, Gerard Gadea-Diez, Stéphane Monfray, Jean-Marie Bluet, J.F. Robillard, Victor Arellano-Arreola, Jose Martin Yañez Limon, Andres de Luna Bugallo, David Renahy, Marc Salleras, Carolina Duque Sierra, Pascal Vincent, Luisa Fonseca, Alex Morata, Albert Tarancón, Séverine Gomés, Pierre-Olivier Chapuis

FisMat 2025 biennial conference on condensed matter physics - Ultrafast Mechanical and Thermal Dynamics thematic workshop, Jul 2025, Venise, Italy. ⟨hal-05347651⟩

  • Communication dans un congrès

AlGaN channel high electron mobility transistors on Si for power electronics

Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Julien Pernot, Maud Nemoz, Sebastian Tamariz, Stéphanie Rennesson, Fabrice Semond, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France. ⟨hal-05398228⟩