Publications

Affichage de 1981 à 1990 sur 16181


  • Article dans une revue

Broadband 3-D Shared Aperture High Isolation Nine-Element Antenna Array for On-Demand Millimeter-Wave 5G Applications

Mohammad Alibakhshikenari, Bal Virdee, Valeria Vadalà, Mariana Dalarsson, María Elena de Cos Gómez, Abdullah Alharbi, Shah Nawaz Burokur, Sonia Aïssa, Iyad Dayoub, Francisco Falcone, Ernesto Limiti

The paper presents the results of a novel 3-D shared aperture 3×3 matrix antenna-array for 26 GHz band 5 G wireless networks. Radiation elements constituting the array are hexagonal-shaped patches that are elevated above the common dielectric substrate by 3.35 mm and excited through a metallic rod…

Optik, 2022, 267, pp.169708. ⟨10.1016/j.ijleo.2022.169708⟩. ⟨hal-03739680⟩

  • Autre publication scientifique

[Invited] Emploi et compétences pour la filière industrie électronique: métiers d'avenir et défi formation

Virginie Hoel

FRENCHSTEM, 11-14 Oct 2022, Saint Raphael, France, 2022. ⟨hal-03813589⟩

  • Article dans une revue

Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, N. Defrance, Christophe Gaquière, Fred Gaillard, Erwan Morvan

We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor…

IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. ⟨10.1109/TED.2022.3201837⟩. ⟨hal-03775876⟩