Publications

• Article dans une revue

Coexistence of ferroelectric phases in barium titanate single-domain thin films

Laurent Baudry

In about twenty years, the temperature-misfit strain phase diagrams have become valuable tools to describe ferroelectric thin film properties. The background theoretical approach consists in searching for the position of the global minimum of the potential landscape and deducing the…

AIP Advances, 2022, 12 (6), pp.065205. ⟨10.1063/5.0088519⟩. ⟨hal-03694914⟩

• Article dans une revue

Adsorption-reduction of Cr(VI) onto unmodified and phytic acid-modified carob waste: Kinetic and isotherm modeling

Kenza Bouaouina, Alexandre Barras, Nacer Bezzi, Mohammed Amin, Sabine Szunerits, Rabah Boukherroub

Carob waste (CW) is an agro-biomass material abundant in nature with potential use for eco-friendly remediation. However, like many biomass-based adsorbents, it suffers from its low adsorption capacity for organic/inorganic pollutants. Therefore, modification using physical and/or chemical means is…

Chemosphere, 2022, 297, pp.134188. ⟨10.1016/j.chemosphere.2022.134188⟩. ⟨hal-03663997⟩

• Article dans une revue

[Review] Lessons from neonatal β-cell epigenomic for diabetes prevention and treatment

Amar Abderrahmani, Cécile Jacovetti, Romano Regazzi

Pancreatic β-cell expansion and functional maturation during the birth-to-weaning period plays an essential role in the adaptation of plasma insulin levels to metabolic needs. These events are driven by epigenetic programs triggered by growth factors, hormones, and nutrients. These mechanisms…

Trends in Endocrinology and Metabolism = Trends in Endocrinology & Metabolism , 2022, 33 (6), pp 378-389. ⟨10.1016/j.tem.2022.03.002⟩. ⟨hal-03662823⟩

• Article dans une revue

SIT: Stochastic Input Transformation to Defend Against Adversarial Attacks on Deep Neural Networks

Amira Guesmi, Ihsen Alouani, Mouna Baklouti, Tarek Frikha, Mohamed Abid

Deep Neural Networks (DNNs) have been deployed in a wide range of applications, including safety-critical domains, owing to their proven efficiency in solving complex problems. However, these systems have been shown vulnerable to adversarial attacks: carefully crafted perturbations that threaten…

IEEE Design & Test, 2022, 39, pp.63 - 72. ⟨10.1109/MDAT.2021.3077542⟩. ⟨hal-03546310⟩

• Article dans une revue

Fullerene‐<span style="font-variant:small-caps;">C₆₀</span>/<span style="font-variant:small-caps;">NH₂</span>: A recyclable heterogeneous catalyst for the green synthesis of chromene and pyrimidine derivatives and antibacterial evaluation

Maryam M. Mirza‐Aghayan, Marzieh Mohammadi, Rabah Boukherroub

An effective procedure for the synthesis of amino-functionalized fullerene with diethylenetriamine (C60-NH2) is described. The obtained material was characterized by Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray…

• Article dans une revue

Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

Abdelhalim Saadi, Marc Margalef‐rovira, Youcef Amara, Loïc Vincent, Sylvie Lepilliet, Christophe Gaquière, Philippe Ferrari

In this paper, the slow-wave coplanar stripline (S-CPS) technology is utilised to design high performance and small footprint resonators operating within the millimetre-wave band from 50 to 80 GHz. The proposed resonators are designed based on high quality factor quasi-lumped capacitances and…

IET Microwaves Antennas and Propagation, 2022, 16, pp 477-488. ⟨10.1049/mia2.12260⟩. ⟨hal-03666401⟩

• Article dans une revue

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq, Eric Frayssinet, Marc Portail, Micka Bah, N. Defrance, Thi Huong Ngo, Mahmoud Abou Daher, Marcin Zielinski, Daniel Alquier, Jean-Claude de Jaeger, Yvon Cordier

In this work, an AlGaN/GaN HEMT structure is grown on a 0.8 μm thick 3C-SiC layer on high resistivity Silicon substrate. The RF propagation losses are investigated and compared with the ones of epi-layers grown directly on Silicon and on 6H-SiC substrates. Short gate length transistors are…

Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩. ⟨hal-03741438⟩

• Communication dans un congrès

Detection and Classification of Interference affecting LoRaWAN communications in Railway environment

Jonathan Villain, Virginie Deniau, Eric Pierre Simon, Christophe Gransart, Artur Nogueira de São José, Florent Valenti, Norbert Becuwe

The French national railway company (SNCF) is deploying Internet of Things (IoT) technologies using the LoRaWAN communication protocol to centralize and transmit the data measured by the onboard sensors to the railway maintenance centers. They recently developed a communication interface connected…

2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC), May 2022, Gran Canaria, Spain. pp.1-4, ⟨10.23919/AT-AP-RASC54737.2022.9814310⟩. ⟨hal-03737982⟩

• Communication dans un congrès

Structural evolution and charge storage mechanism of sputtered LiMn15Ni1;5O4 thin films by X-ray diffraction and Raman spectroscopy

Ankush Bhatia, Clement Leviel, Maxime Hallot, Jean Pierre Pereira-Ramos, Christophe Lethien, Pascal Roussel, Rita Baddour-Hadjean

European Materials Research Society Spring meeting (EMRS 2022), May 2022, Visioconférence, France. ⟨hal-04304410⟩

• Communication dans un congrès

A test methodology to assess the susceptibility of LTE communications in a railway electromagnetic environment

Nathan Chopinet, Virginie Deniau, Eric Pierre Simon, Artur Nogueira de Sao Jose, Jonathan Villain

The LTE communication protocol is more and more employed in the railway domain. Indeed, the LTE throughput enables railway companies to offer Wi-Fi connections to their customers inside the trains. LTE is also used in innovation projects such as remote train control and autonomous trains. However,…

2022 3rd URSI Atlantic and Asia Pacific Radio Science Meeting (AT-AP-RASC), May 2022, Gran Canaria, Spain. pp.1-4, ⟨10.23919/AT-AP-RASC54737.2022.9814386⟩. ⟨hal-03744120⟩