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Article dans une revue

Wearable Spoof Surface Plasmon Polariton Transmission Line

Ali Ghaddar, Baptiste Garnier, François Rault, Eric Lheurette, Ludovic Burgnies

In this work, we present a study of Spoof Surface Plasmon Polari-ton (SSPP) supported by a meandered Transmission Line (TL) dedicated to wireless body sensor network applications. First, dispersion curves evidence the existence of a surface wave propagation, called odd mode according to the…

E3S Web of Conferences, 2022, 351, pp.01090. ⟨10.1051/e3sconf/202235101090⟩. ⟨hal-03681574⟩

Communication dans un congrès

Single cell classification using statistical learning on mechanical properties measured by mems tweezers

Bahram Ahmadian, Deborah Mbujamba, Jean Claude Gerbedoen, Momoko Kumemura, Hiroyuki Fujita, Dominique Collard, Sophie Dabo-Niang, Chann Lagadec, Mehmet Tarhan

Cell population is heterogenous and so presents a wide range of properties as metastatic potential. But using rare cells for clinical applications requires precise classification of individual cells. Here, we propose a multi-parameter analysis of single cells to classify them using statistical…

IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS 2022), Jan 2022, Tokyo, Japan. pp.317-320, ⟨10.1109/MEMS51670.2022.9699466⟩. ⟨hal-03528082⟩

Article dans une revue

[Letter to editor] Altered microRNA expression in severe COVID‐19: Potential prognostic and pathophysiological role

Nathalie Garnier, Kato Pollet, Marie Fourcot, Morgan Caplan, Guillemette Marot, Julien Goutay, Julien Labreuche, F. Soncin, Rabah Boukherroub, Didier Hober, Sabine Szunerits, Julien Poissy, Ilka Engelmann

Letter to editor

Clinical and Translational Medicine, 2022, 12 (6), pp.e899. ⟨10.1002/ctm2.899⟩. ⟨hal-03700328⟩

Communication dans un congrès

Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V

Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub

We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a drain bias (VDS) as high as 70V for two different gate…

European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩

Article dans une revue

The good, the bad and the ugly polishing: Effect of abrasive size on standardless EDS analysis of Portland cement clinker’s calcium silicates

Vincent Thiéry, Emmanuel Dubois, Séverine Bellayer

Standardless Energy dispersive spectroscopy (EDS) on polished samples of Portland cement clinker is routinely performed both for unhydrated phases as well as in cement pastes. Typically, the calcium to silica ratio is investigated. EDS analyses are highly dependent on the polishing quality of the…

Micron, 2022, 158, pp.103266. ⟨10.1016/j.micron.2022.103266⟩. ⟨hal-03662917⟩

Article dans une revue

Spectrum Sensing Using Software Defined Radio for Cognitive Radio Networks: A Survey

Julio Manco-Vasquez, Iyad Dayoub, Amor Nafkha, Mohammad Alibakhshikenari, Hayfa Ben Thameur

Cognitive radio (CR) network has emerged as a potential solution to the under-utilization problem of the allocated radio spectrum, where spectrum sensing (SS) plays a key role to enable the coexistence between primary and secondary users. It has attracted research interests, and several works have…

IEEE Access, 2022, 10, pp.131887-131908. ⟨10.1109/ACCESS.2022.3229739⟩. ⟨hal-03926173⟩

Communication dans un congrès

Nanostructures wetting evaluation using ultra high frequency ultrasound

Abbas Salhab, Julien Carlier, Malika Toubal, Pierre Campistron, Marc Neyens, Bertrand Nongaillard, V. Thomy

Ultrasounds are a great tool for defects detection particularly for optically non-transparent materials. Hence, working at very high frequency (#GHz) allows the detection of nanoscale contact defects at the interface between two materials and especially in the presence of air, which has negligible…

SPIE OPTO conference 12002, Oxide-based Materials and Devices XIII, Jan 2022, San Francisco, United States. pp.58, ⟨10.1117/12.2620992⟩. ⟨hal-03620169⟩

Article dans une revue

Wafer-level vapor cells filled with laser-actuated hermetic seals for integrated atomic devices

Vincent Maurice, Clément Carlé, Shervin Keshavarzi, Ravinder Kumar Chutani, Samuel Queste, Ludovic Gauthier-Manuel, Jean-Marc Cote, Rémy Vicarini, Moustafa Abdel Hafiz, Rodolphe Boudot, Nicolas Passilly

Atomic devices such as atomic clocks and optically-pumped magnetometers rely on the interrogation of atoms contained in a cell whose inner content has to meet high standards of purity and accuracy. Glass-blowing techniques and craftsmanship have evolved over many decades to achieve such standards…

Microsystems & Nanoengineering, 2022, 8 (129), pp.13. ⟨10.1038/s41378-022-00468-x⟩. ⟨hal-04224417⟩

Communication dans un congrès

Ressaut circulaire hydraulique: comment prendre en compte la tension de surface?

Alexis Duchesne, Laurent Limat

Récemment, une nouvelle loi d’échelle a été observée par Bhagat et al. [1] pour modéliser les dépendances du rayon du ressaut circulaire hydraulique. Les auteurs ont attribué cette nouvelle loi à un terme de tension de surface manquant jusqu’à présent dans l’équation de conservation de l’énergie.…

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607845⟩

Article dans une revue

Elaboration and characterization of porous ultrathin gold films grown by ion beam assisted deposition

Abdelhanin Aassime, Marc Duquennoy, Frédéric Hamouda, Tahar Kadi, Frédéric Mahut, Mohammadi Ouaftouh

The growth of ultrathin gold layers on a silicon substrate is performed with an unconventional ion beam assisted deposition. In this setup, evaporated gold flow and ion beam flux are perpendicular. 5 and 10 nm thick gold were deposited on tilted samples with the assistance of an argon ion beam at…

Journal of Vacuum Science & Technology A, 2022, 40 (5), pp.053404. ⟨10.1116/6.0002050⟩. ⟨hal-03769982⟩