Publications

Affichage de 2741 à 2750 sur 16261


  • Communication dans un congrès

[Invited] High power-added-efficiency millimeter-wave GaN HEMTs

F Medjdoub

GaN marathon 2022, Jun 2022, Venice, Italy. ⟨hal-03637096⟩

  • Communication dans un congrès

Real-time Traffic Data Collection Using The Two Simulators SUMO and OMNeT++

Riham Farhani, Yassin El Hillali, Atika Rivenq, Abdelwahed Hajjaji, Yahia Boughaleb

Electric vehicles (EVs) are one of the encouraging solutions to improve energy efficiency and reduce carbon emissions in the transportation sector. Today, electric vehicles have experienced massive growth that has brought multiple benefits to the energy and transportation sectors, but they can also…

2022 11th International Symposium on Signal, Image, Video and Communications (ISIVC), May 2022, El Jadida, Morocco. pp.1-4, ⟨10.1109/ISIVC54825.2022.9800716⟩. ⟨hal-03707030⟩

  • Article dans une revue

[Review] The role of the surface ligand on the performance of electrochemical SARS-CoV-2 antigen biosensors

Sabine Szunerits, Quentin Pagneux, Abir Swaidan, Vladyslav Mishyn, Alain Roussel, Christian Cambillau, David Devos, Ilka Engelmann, Enagnon Kazali Alidjinou, Henri Happy, Rabah Boukherroub

Point-of-care (POC) technologies and testing programs hold great potential to significantly improve diagnosis and disease surveillance. POC tests have the intrinsic advantage of being able to be performed near the patient or treatment facility, owing to their portable character. With rapid results…

Analytical and Bioanalytical Chemistry, 2022, 414, pp 103-113. ⟨10.1007/s00216-020-03137-y⟩. ⟨hal-03335177⟩

  • Article dans une revue

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Gaudencio Paz-Martínez, Ignacio Íñiguez-De-La-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, Tomás González

The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors. We have characterized in temperature (8–400 K) the…

Sensors, 2022, 22 (4), pp.1515. ⟨10.3390/s22041515⟩. ⟨hal-03582713⟩

  • Article dans une revue

Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

Jawad Hadid, Ivy Colambo, Jose Avila, Aexandre Plaud, Christophe Boyaval, D. Deresmes, Nicolas Nuns, Pavel Dudin, Annick Loiseau, Julien Barjon, Xavier Wallart, Dominique Vignaud

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on…

Nanotechnology, 2022, 34 (3), pp.035601. ⟨10.1088/1361-6528/ac99e5⟩. ⟨hal-03818640⟩