Publications

• Thèse

Acoustic metamaterials for underwater applications : homogenisation methods, design optimisation and experimental characterisation, Métamatériaux acoustiques pour applications sous-marines : méthodes d'homogénéisation, optimisation de designs et caractérisation expérimentale

Laëtitia Roux

Designing efficient hull coatings for acoustic stealth of submerged vehicles remains a challenge that evolves along with improvements in sonar performance. Low frequency performance is particularly important for military applications, due to the long range propagation properties of low frequency…, Concevoir des revêtements de coque pour la furtivité acoustique des véhicules submergés demeure un défi évoluant constament avec l'amélioration des performances sonar. Les performances à basses fréquences sont particulièrement importantes pour les applications militaires, en raison des…

Acoustics [physics.class-ph]. Université de Lille, 2021. English. ⟨NNT : 2021LILUN015⟩. ⟨tel-03626959⟩

• Communication dans un congrès

Cryptosporidium parvum et microbiote intestinal : une piste de recherche de nouveaux traitements alternatifs

Karim Tarik Adjou, Mohamed Mammeri, Myriam Thomas, A Chevillot, Bruno Polack, Isabelle Vallée, Jérôme Follet

2èmes journées SAPS (Sciences Animales Paris Saclay),, INRAE, Sep 2021, jouy-en Josas, France, France. ⟨hal-04525565⟩

• Article dans une revue

Unprecedented ON/OFF Ratios in Photoactive Diarylethene-Bisthienylbenzene Molecular Junctions

Imen Hnid, Mingyang Liu, Denis Frath, Sebastien Bellynck, Frederic Lafolet, Xiaonan Sun, Jean-Christophe Lacroix

Nano Letters, 2021, 21 (18), pp.7555-7560. ⟨10.1021/acs.nanolett.1c01983⟩. ⟨hal-05360499⟩

• Brevet

Synapse artificielle commutée

Francois Danneville, Alain Cappy, Ilias Sourikopoulos, Christophe Loyez

Japon, N° de brevet: JP2021523482 (A) 2021-09-02. 2021, N° de priorité : FR20180054010 20180514 - N° de demande : JP20200564163 20190513. ⟨hal-05654994⟩

• Article dans une revue

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

Mahmoud Abou Daher, Marie Lesecq, N. Defrance, Etienne Okada, Bertrand Boudart, Yannick Guhel, Jean-Guy Tartarin, Jean-Claude de Jaeger

In this paper, electrical and thermal analysis of short gate length AlGaN/GaN HEMTs (high electron mobility transistors) transferred onto diamond substrate through aluminum nitride (AlN) layer are provided. The specific transfer technology uses sputtered AlN as bonding layer. An improvement in…

Microwave and Optical Technology Letters, 2021, 63 (9), pp.2376-2380. ⟨10.1002/mop.32919⟩. ⟨hal-03249292⟩

• Article dans une revue

Fano resonance between stokes and anti-stokes Brillouin scattering

Kwanto Lai, Daniel Finkelstein-Shapiro, Sebastian Lehmann, Arnaud Devos, Pierre-Adrien Mante

In recent years, the manipulation of Fano resonances in the time domain has unlocked deep insights into a broad spectrum of systems’ coherent dynamics. Here, inelastic scattering of light with coherent acoustic phonons is harnessed to achieve complex Fano resonances. The sudden change of phonon…

Physical Review Research, 2021, 3 (3), pp.L032010. ⟨10.1103/physrevresearch.3.l032010⟩. ⟨hal-03282287⟩

• Article dans une revue

Stochastic Resource Optimization of Random Access for Transmitters with Correlated Activation

Ce Zheng, Malcolm Egan, Laurent Clavier, Anders E Kalør, Petar Popovski

For a range of scenarios arising in sensor networks, control and edge computing, communication is event-triggered; that is, in response to the environment of the communicating devices. A key feature of device activity in this setting is correlation, which is particularly relevant for sensing of…

IEEE Communications Letters, 2021, 25 (9), pp.3055-3059. ⟨10.1109/LCOMM.2021.3090110⟩. ⟨hal-03212813⟩

• Article dans une revue

75 nm gate length PHEMT with f max = 800 GHz using asymmetric gate recess: RF and noise investigation

M. Samnouni, Nicolas Wichmann, X. Wallart, Christophe Coinon, Sylvie Lepilliet, S. Bollaert

We report a high maximum frequency of oscillation (f max) and a current-gain cutoff frequency (f T) of 800 and 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHEMT), using an InGaAs/InAs composite channel and an asymmetric gate recess. This result was achieved with…

IEEE Transactions on Electron Devices, 2021, 68 (9), pp.4289-4295. ⟨10.1109/TED.2021.3098255⟩. ⟨hal-03419728⟩

• Article dans une revue

Photopatternable hydroxide ion electrolyte for solid-state micro-supercapacitors

Christopher Choi, Kevin Robert, Grace Whang, Pascal Roussel, Christophe Lethien, Bruce Dunn

Electrochemical energy storage (EES) devices that provide high power and energy for micropower systems are considered to be essential for developing micro/nano electronics such as nanorobotics, environmental sensors, and connected smart electronics. One promising research direction in this field…

Joule, 2021, 5 (9), pp.2466-2478. ⟨10.1016/j.joule.2021.07.003⟩. ⟨hal-03501780⟩

• Article dans une revue

Blind Adaptive Low-Complexity Time-Domain Equalizer for 100-Gb/s Direct-Detection Optical OFDM Systems Over Long-Reach SSMF

Asmaa Benieddi, Sid Ahmed Elahmar, Iyad Dayoub, Shyqyri Haxha

In this article, we report a low-complexity blind adaptive time-domain equalizer (TEQ) to reduce the cyclic prefix (CP) length for 100-Gb/s direct-detection optical orthogonal frequency-division multiplexing (OFDM) system combined with wavelength-division multiplexing system over 400-km standard…

IEEE Systems Journal, 2021, 15 (3), pp.3841-3847. ⟨10.1109/JSYST.2020.2996384⟩. ⟨hal-03382867⟩