Publications

Affichage de 3121 à 3130 sur 16434


  • Communication dans un congrès

Study of Graded Ultrathin CIGS/Si Structure for Solar Cell Applications

M. Boubakeur, Abdelkader Aissat, Jean-Pierre Vilcot

This paper aims to improve the performance of graded ultrathin CIGS-based solar cells using the one-dimensional simulation program (SCAPS-1D). In this context, we have assessed the effect of the graded bandgap and the thickness of the absorber layer (CIGS) on solar cell performance. We have also…

International Conference on Electronic Engineering and Renewable Energy Systems, Apr 2020, Saidia, Morocco. pp.317-324, ⟨10.1007/978-981-15-6259-4_33⟩. ⟨hal-03043566⟩

  • Communication dans un congrès

Quadratic detection-based millimeter-wave MMIC for TDoA and AoA measurement

Michael Bocquet, Christophe Loyez, Kamel Haddadi

This paper presents a versatile topology of a monolithic microwave monolithic integrated circuit (MMIC) capable of performing multiple functionalities for next-generation wireless communications and geolocation devices. The architecture of this MMIC allows several modes of operation such as…

2021 International Conference on Electromagnetics in Advanced Applications (ICEAA), Aug 2021, Honolulu, United States. pp.321-324, ⟨10.1109/ICEAA52647.2021.9539767⟩. ⟨hal-03541083⟩

  • Communication dans un congrès

In Situ liquid electrochemical TEM investigation of Semi-Solid State LMNO Micro-Battery

Ankush Bhatia, Maxime Hallot, Sorina Creţu, Maxime Berthe, Nicolas Folastre, David Troadec, Pascal Roussel, Jean Pierre Pereira-Ramos, Rita Baddour-Hadjean, C. Lethien, Arnaud Demortière

Microscopy and Microanalysis (M&M2021), Aug 2021, Virtual conference, France. ⟨hal-04410878⟩

  • Article dans une revue

Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Zhan Gao, Matteo Meneghini, Kathia Harrouche, Riad Kabouche, Francesca Chiocchetta, Etienne Okada, Fabiana Rampazzo, Carlo de Santi, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode…

Microelectronics Reliability, 2021, 123, pp.114199. ⟨10.1016/j.microrel.2021.114199⟩. ⟨hal-03287632⟩