Publications

• Communication dans un congrès

[Invited] Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles

Christophe Delerue, Nathali Alexandra Franchina Vergel, L. Christiaan Post, Athmane Tadjine, Yannick Lambert, Francois Vaurette, L. Desplanque, X. Wallart, Didier Stiévenard, M.P. Boneschanscher, J.L. Peters, Maryam Alimoradi Jazi, Thomas S Gardenier, Jette J van den Broeke, J.R. Moes, Ingmar Swart, Cristiane Morais Smith, B. Grandidier, Daniel Vanmaekelbergh

34èmes Journées Surfaces & Interfaces, JSI 2020, Jan 2020, Paris, France. ⟨hal-03317736⟩

• Article dans une revue

Quantum cascade laser-pumped terahertz molecular lasers: frequency noise and phase-locking using a 1560nm frequency comb

Jean-Francois Lampin, Antoine Pagies, Giorgio Santarelli, Jeffrey Hesler, Wolfgang Hänsel, Ronald Holzwarth, S Barbieri

The recent demonstration of a terahertz (THz) molecular gas laser pumped by a mid-infrared quantum cascade laser (QCL) has opened up new perspectives for this family of sources, traditionally relying on CO2-laser pumping. A so far open question concerning QCL-pumped THz molecular lasers (MLs) is…

Optics Express, 2020, 28 (2), pp.2091-2106. ⟨10.1364/OE.379960⟩. ⟨hal-02410876⟩

• Communication dans un congrès

[Invited] Newton Principia Geneva Edition ([1739-1742] 1822)–2022. A Research Editorial Project

Raffaele Pisano

Invited talks at The Scuola Superiore Normale di Udine, 20th January, Italy, Scuola Superiore Normale di Udine, University of Udine, Italy, Jan 2020, Udine, Italy. ⟨hal-04518345⟩

• Article dans une revue

Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment

Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Gaudenzio Meneghesso, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, F Medjdoub

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon…

Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩

• Article dans une revue

High performance of 3D silicon nanowires array@CrN for electrochemical capacitors

Abdelouadoud Guerra, Emile Haye, Amine Achour, Maxime Harnois, Toufik Hadjersi, Jean-Francois Colomer, Jean-Jacques Pireaux, Stéphane Lucas, Rabah Boukherroub

Silicon nanowire (SiNW) arrays were coated with chromium nitride (CrN) for use as supercapacitor electrodes. The CrN layer of different thicknesses was deposited onto SiNWs using bipolar magnetron sputtering method. The areal capacitance of the SiNWs-CrN, as measured in 0.5 M HSO electrolyte, was…

Nanotechnology, 2020, 31 (3), pp.035407. ⟨10.1088/1361-6528/ab4963⟩. ⟨hal-02367944⟩

• Article dans une revue

Chalcogenide glasses for innovation in applied science: fundamental issues and new insights

Carlo Massobrio, Assil Bouzid, Mauro Boero, Guido Ori, Évelyne Martin, Sébastien Le Roux

We provide an overview of what has been accomplished by our team, since 1998, in the area of firstprinciples molecular dynamics (FPMD) modeling of glassy chalcogenides, a prototypical family of network disordered materials. After a broad introduction that defines the main motivation and strategy of…

Journal of Physics D: Applied Physics, 2020, 53 (3), pp.033002. ⟨10.1088/1361-6463/ab48a4⟩. ⟨hal-02349413⟩

• Communication dans un congrès

[Invited] Exploiting the THz synchrotron radiation at its highest resolution and in a broadband fashion using heterodyne techniques

Marie-Aline Martin-Drumel, O. Pirali, S. Eliet, Z. Buchanan, J. Turut, P. Roy, Francis Hindle, Jean-Francois Lampin, Gaël Mouret

résumé

SOLEIL Users’ Meeting, Jan 2020, Gif sur Yvette, France. ⟨hal-04410769⟩

• Article dans une revue

Thermal response and correlation between mobility and kink effect in GaN HEMTs

Mohammad A. Alim, S. Afrin, A. A. Rezazadeh, Christophe Gaquière

This work notices the relation among the kink effect and the mobility in AlGaN/GaN HEMT and its response to temperature. The kink phenomenon found in transistor behaviour are carefully characterized at persuade point which is straightaway linked to the shallow traps positioned underneath the…

Microelectronic Engineering, 2020, 219, 111148, 5 p. ⟨10.1016/j.mee.2019.111148⟩. ⟨hal-03322821⟩

• Communication dans un congrès

Sensors based on AlGaN/GaN HEMT for fast H₂ and O₂ detection and measurement at high temperature

Hassane Ouazzani Chahdi, Omar Helli, Nour Eddine Bourzgui, Leo Breuil, David Danovitch, Paul B Voss, Suresh Sundaram, Vincent Aubry, Yacine Halfaya, Abdallah Ougazzaden, Jean-Paul Salvestrini, Hassan Maher, Ali Soltani

Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify H₂ (1.5-10%) and O₂ (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seconds of the transient response…

• Article dans une revue

Ultraviolet‐Durable Flexible Nonfullerene Organic Solar Cells Realized by a Hybrid Nanostructured Transparent Electrode

Tao Xu, Chunliu Gong, Shuanglong Wang, Hong Lian, Weixia Lan, Gaëtan Lévêque, B. Grandidier, Jerome Plain, Renaud Bachelot, Bin Wei, Furong Zhu

A significant enhancement in ultraviolet (UV)-durable indium tin oxide (ITO)-free flexible nonfullerene organic solar cells (OSCs) is demonstrated using a hybrid nanostructured flexible transparent electrode (FTE), comprising a mixture of 0D silver nanoparticles, 1D Ag nanowires, and 2D exfoliated…

Solar RRL, 2020, 4 (5), pp.1900522. ⟨10.1002/solr.201900522⟩. ⟨hal-03418472⟩