Publications

• Article dans une revue

Electrothermal patches driving the transdermal delivery of insulin

Quentin Pagneux, Ran Ye, Li Chengnan, Alexandre Barras, Nathalie Hennuyer, Bart Staels, D. Caina, J. Osses, Amar Abderrahmani, Valérie Plaisance, Valérie Pawlowski, Rabah Boukherroub, Sorin Melinte, Sabine Szunerits

Nanoscale Horizons, 2020, 5 (4), pp.663-670. ⟨10.1039/c9nh00576e⟩. ⟨hal-03090048⟩

• Communication dans un congrès

A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications

Walid Aouimeur, Marc Margalef-Rovira, Estelle Lauga-Larroze, Daniel Gloria, Christophe Gaquière, Issa Alaji, Jean-Daniel Arnould

This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double…

IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020, Nov 2020, Linz, Austria. 4 p., ⟨10.1109/ICMIM48759.2020.9299098⟩. ⟨hal-02934668⟩

• Article dans une revue

Multibias and temperature dependence of the current-gain peak in GaN HEMT

Mohammad A. Alim, Muhammad A. Hasan, Ali A. Rezazadeh, Christophe Gaquière, Giovanni Crupi

Thermal and multibias behavior of the peak in the short-circuit current-gain (h21) has been investigated for a GaN HEMT, aiming to contribute to an extensive knowledge on it. To obtain a simple and complete insight of this phenomenon and its influence in device performance over operating conditions…

International Journal of RF and Microwave Computer-Aided Engineering, 2020, 30 (4), ⟨10.1002/mmce.22129⟩. ⟨hal-03140633⟩

• Article dans une revue

Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances

Khaoula Ferchichi, Ramzi Bourguiga, Kamal Lmimouni, Sébastien Pecqueur

Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve record conductivity values of one of the most…

Synthetic Metals, 2020, 262, pp.116352. ⟨10.1016/j.synthmet.2020.116352⟩. ⟨hal-02509617⟩

• Article dans une revue

A parametric technique for trap characterization in AlGaN/GaN HEMTs

Steven Duffy, Brahim Benbakhti, Wei Zhang, Khaled Ahmeda, Karol Kalna, Mohammed Boucherta, Maghnia Mattalah, Hassane Ouazzani Chahdi, Nour Eddine Bourzgui, Ali Soltani

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both…

IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩. ⟨hal-03142223⟩

• Article dans une revue

Fabrication of superhydrophobic/superoleophilic functionalized reduced graphene oxide/polydopamine/PFDT membrane for efficient oil/water separation

Yuanyuan Cheng, Alexandre Barras, Shixiang Lu, Wenguo Xu, Sabine Szunerits, Rabah Boukherroub

Separation and Purification Technology, 2020, 236, pp.116240. ⟨10.1016/j.seppur.2019.116240⟩. ⟨hal-03090045⟩

• Article dans une revue

Are CNNs reliable enough for critical applications? An exploratory study

Mohamed Ayoub Neggaz, Ihsen Alouani, Smail Niar, Fadi Kurdahi

Resource-constrained CNN implementations are subject to various reliability threats. This article provides an exploratory study investigating the impact of faults (soft errors modeled as bit flips) across the parameters of CNNs and the impact on the CNN weights, which can be used to create…

IEEE Design & Test, 2020, 37 (2), pp.76-83. ⟨10.1109/MDAT.2019.2952336⟩. ⟨hal-03321520⟩

• Article dans une revue

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, F Medjdoub

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without…

Physica Status Solidi A (applications and materials science), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩

• Article dans une revue

Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet, Luan Nguyen, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Rémi Comyn, Thi Huong Ngo, Marcin Zielinski, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic…

Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩. ⟨hal-02929058⟩

• Article dans une revue

Covert Capacity of Non-Coherent Rayleigh-Fading Channels

Mehrdad Tahmasbi, Anne Savard, Matthieu Bloch

The covert capacity is characterized for a non-coherent fast Rayleigh-fading wireless channel, in which a legitimate user wishes to communicate reliably with a legitimate receiver while escaping detection from a warden. It is shown that the covert capacity is achieved with an amplitude-constrained…

IEEE Transactions on Information Theory, 2020, 66 (4), pp.1979-2005. ⟨10.1109/TIT.2019.2956489⟩. ⟨hal-02441829⟩