Publications

Affichage de 3831 à 3840 sur 16178


  • Rapport

INTERfaCe neurObiohybride pour la communication bidirectioNNElle entre des neurones arTificiels et des neurones vivants

Dimitri Henniquau, Rédha Kassi, Vanessa Avramovic, David Delcroix, A. Cappy, Alexis Vlandas, Christel Vanbesien, Virginie Hoel

[Contrat] Rapport bilan fin de parcours projet Interconnect, CNRS Innovation. 2020. ⟨hal-03341111⟩

  • Communication dans un congrès

On the potentialities of architectured structures for underwater applications

Arthur Terroir, Charles Croënne, Jerome O. Vasseur, Mohamadd Ayad, Rachid Rahouadj, Jean-François Ganghoffer, Anne-Christine Hladky

Due to recent developments in additive manufacturing, architectured metamaterials with specific microstructure are widely studied due to the large range of available designs and corresponding effective properties. In this paper, a periodic structure based on a periodic arrangement designed by F.…

Forum Acusticum, Dec 2020, Lyon, France. pp.1155-1155, ⟨10.48465/fa.2020.0507⟩. ⟨hal-03240274⟩

  • Communication dans un congrès

[Invited] Vers la fabrication de micro-dispositifs de stockage électrochimique en technologie couche mince pour l'IoT

Christophe Lethien

Journées Annuelles du GDR OXYFUN, Nov 2020, Guéthary, France. ⟨hal-03547311⟩

  • Article dans une revue

Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substrate

Hassane Ouazzani Chahdi, Brahim Benbakhti, Maghnia Mattalah, Jean Claude Gerbedoen, Abdelatif Jaouad, Nour Eddine Bourzgui, Ali Soltani

Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN/GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduction in tensile strain at the surface of AlGaN…

IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩. ⟨hal-03322826⟩