Publications

• Communication dans un congrès

Non-reciprocal Behavior of One-dimensional Piezoelectric Structures with Space-time Modulated Electrical Boundary Conditions

Charles Croënne, Sarah Tessier, Jerome O. Vasseur, Olivier Bou Matar, Anne-Christine Hladky, Bertrand Dubus

Propagation of longitudinal acoustic waves in a one-dimensional piezoelectric structure with space-time modulated electrical boundary conditions is investigated. An analytical model allowing the calculation of eigenmodes for spatially continuous shifts of electrical boundary conditions is compared…

Forum Acusticum, Dec 2020, Lyon, France. pp.613-613, ⟨10.48465/fa.2020.0137⟩. ⟨hal-03240223⟩

• Article dans une revue

Performance analysis of UFMC waveform in graded index fiber for 5G communications and beyond

Mahdi Kasmi, Sofien Mhatli, Faouzi Bahloul, Iyad Dayoub, Kyunghwan Oh

For the first time, we demonstrate in this paper an intensity-modulation direct-detection (IMDD) universal filtered multi-carrier (UFMC) system through several hundred meters of multimode fiber (MMF) that can be adopted for 5G communications and beyond. The proposed system is simulated and…

Optics Communications, 2020, 454, pp.124360. ⟨10.1016/j.optcom.2019.124360⟩. ⟨hal-03507911⟩

• Communication dans un congrès

Numerical analysis of a tubular phononic crystal sensor

A. Gueddida, Yan Pennec, S. Hemon, F. Lucklum, M. Vellekoop, N. Mukhin, R. Lucklum, B. Bonello, Bahram Djafari-Rouhani

We present a theoretical investigation of the dispersion and transmission properties of a tubular phononic crystal for sensing application. We show the existence of modes confined in a cavity with displacement field spreading over both the solid and fluid parts. Therefore, the frequency of the…

IEEE Sensors Conference, Oct 2020, Rotterdam, Netherlands. pp.1-3, ⟨10.1109/SENSORS47125.2020.9278673⟩. ⟨hal-03322810⟩

• Article dans une revue

Low-frequency noise parameter extraction method for single-layer graphene FETs

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi, Dominique Vignaud, Henri Happy, Ramon Garcia Cortadella, Nathan Schaefer, Andrea Bonaccini Calia, Jose Antonio Garrido, David Jimenez

In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. The drain current and LFN of two short channel back-gated GFETs (L = 300 and 100 nm) were…

IEEE Transactions on Electron Devices, 2020, 67 (5), pp.2093-2099. ⟨10.1109/TED.2020.2978215⟩. ⟨hal-03142225⟩

• Article dans une revue

Plasmon-enhanced electrocatalytic oxygen reduction in alkaline media on gold nanohole electrodes

Tamazouzt Nait Saada, Anderson Gabriel Marques da Silva, Palaniappan Subramanian, Liuqing Pang, Noual Adnane, Bahram Djafari-Rouhani, Vladyslav Mishyn, Dalila Meziane, Sorin Melinte, Georgiana Sandu, Franck Dumeignil, Sébastien Paul, Robert Wojcieszak, Rabah Boukherroub, Sabine Szunerits

Plasmon-driven chemical transformation has become a promising approach for enhancing sluggish electrocatalytic reactions. Herein, an alternative enhancement strategy employing plasmon-induced hot electrons was developed and found to be competitive with oxygen reduction reaction (ORR) on platinum…

Journal of Materials Chemistry A, 2020, 8 (20), pp.10395-10401. ⟨10.1039/C9TA14174J⟩. ⟨hal-02906604⟩

• Article dans une revue

Negatively Charged Excitons in CdSe Nanoplatelets

Elena V Shornikova, Dmitri R Yakovlev, Louis Biadala, Scott A Crooker, Vasilii V Belykh, Mikhail V Kochiev, Alexis Kuntzmann, Michel Nasilowski, Benoit Dubertret, Manfred Bayer

Energy Trion Exciton The low-temperature emission spectrum of CdSe colloidal nanoplatelets (NPLs) consists of two narrow lines. The high-energy line stems from the recombination of neutral excitons. The origin of the low-energy line is currently debated. We experimentally study the spectral shift,…

Nano Letters, 2019, 20 (2), pp.1370-1377. ⟨10.1021/acs.nanolett.9b04907⟩. ⟨hal-03000677⟩

• Article dans une revue

Velocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors (FETs)

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi, Dominique Vignaud, Henri Happy, Ramon Garcia Cortadella, Andrea Bonaccini Calia, Jose Garrido, David Jiménez

Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in…

ACS Applied Electronic Materials, 2019, 1 (12), pp.2626-2636. ⟨10.1021/acsaelm.9b00604⟩. ⟨hal-03133324⟩

• Article dans une revue

Self-template synthesis of ZnS/Ni3S2 as advanced electrode material for hybrid supercapacitors

Yuan Zhang, Ning Cao, Min Li, Sabine Szunerits, Ahmed Addad, Pascal Roussel, Rabah Boukherroub

Electrochimica Acta, 2019, 328, pp.135065. ⟨10.1016/j.electacta.2019.135065⟩. ⟨hal-03090080⟩

• Thèse

Caractérisation et modélisation de composants terahertz, Charactersation and modeling of terahertz devices

Kévin Froberger

Le domaine térahertz est un domaine de fréquences de plus en plus étudié à cause des propriétés particulières de ce rayonnement. La faible énergie des photons permet notamment de faire de l’imagerie médicale, du contrôle non destructif dans l’industrie ou encore d’étudier les astres qui nous…, The terahertz domain is a frequency range, which interest keeps growing because of its properties. Because of the low energy of the photons, it becomes possible to use it for medical imaging, non destructive testing in the industry or even learn about the celestial objects around us. Its high…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI102⟩. ⟨tel-03623282⟩

• Thèse

Fabrication de transistors HEMTs AlGaN/GaN de haute fiabilité sur substrat free-standing GaN de haute qualité, Fabrication of high reliability AlGaN / GaN HEMTs on high quality GaN free-standing substrate

Mohamed Reda Irekti

Le nitrure de gallium (GaN) constitue le meilleur candidat pour la réalisation de transistors de type HEMT de puissance fonctionnant à haute fréquence. A l’heure actuelle, en raison de la faible disponibilité de substrats GaN, la plupart des dispositifs sont fabriqués par hétéro-épitaxie sur des…, Gallium nitride is the best candidate for the fabrication of High Electron Mobility Transistors for high power/high frequency applications. Due to the lack of availability of GaN substrates, most of devices are currently fabricated by hetero-epitaxy on Si, SiC or sapphire substrates. None of these…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI095⟩. ⟨tel-03624139⟩