Publications

Affichage de 3931 à 3940 sur 16062


  • COMM

Nanothermometry by Means of Scanning Thermal Microscopy: Investigation of Electro-thermal Devices with Embedded Metallic Lines

G. Hamaoui, A. Pic, W. Zhao, A. Alkurdi, J. Yin, S. Gallois-Garreignot, M. Bugnet, J.F. Robillard, Séverine Gomès, Pierre-Olivier Chapuis

THERMINIC 26 (Thermal Investigation of ICs and Systems), Sep 2019, Lecco, Italy. ⟨hal-02379735⟩

  • ART

NanoSIMS imaging of D/H ratios on FIB sections

Dan Lévy, Jérôme Aléon, Alice Aléon-Toppani, David Troadec, Rémi Duhamel, Adriana Gonzalez-Cano, Hélène Bureau, Hicham Khodja

The D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam (FIB) sections is developed in order to combine isotopic imaging by Nanoscale Secondary Ion Mass Spectrometry (NanoSIMS) of micrometer-sized grains with other nanoscale imaging techniques, such as Transmission Electron…

Analytical Chemistry, 2019, 91, pp.13763-13771. ⟨10.1021/acs.analchem.9b03134⟩. ⟨cea-02300872⟩

  • COMM

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, Riad Kabouche, Malek Zegaoui, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

We report on linearity and robustness of AlN/GaN HEMTs with ultra-thin 4nm AlN barrier for millimeter wave range applications. Static and dynamic I-V characteristics feature high peak transconductance (gmpeak) of 385 mS/mm, and the transconductance exhibits small changes with gate bias. Semi on-…

30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩

  • COMM

Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its…

30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩

  • COMM

An adaptive threshold for change detection methods using a windowed entropy-based criterion - Application to fault-tolerant fusion in collaborative mobile robotics

Bilal Daass, Denis Pomorski, Kamel Haddadi

2019 4th Conference on Control and Fault Tolerant Systems (SysTol), Sep 2019, Casablanca, Morocco. pp.56-61, ⟨10.1109/SYSTOL.2019.8864768⟩. ⟨hal-02432105⟩

  • COMM

Development of Highly Sensitive Niobium Nitride Resistive Thermal Probes for Nanoscale Thermal Microscopy

R. Swami, J. Paterson, D. Singhal, G. Julié, S. Le Denmat, J.-F. Motte, A. Alkurdi, J. Yin, J.F. Robillard, P.-O. Chapuis, S. Gomes, Olivier Bourgeois

E-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics", Sep 2019, Varsovie, Poland. ⟨hal-02379675⟩