Publications

Affichage de 3951 à 3960 sur 16058


  • POSTER

Micro-diffraction study of sputtered LiMn1.5Ni0.5O4 thin films for Li-ion micro-batteries

Clément Leviel, Maxime Hallot, Florent Blanchard, Christophe Lethien, Pascal Roussel

7th European Conference on Solid State Chemistry (ECSSC17), Sep 2019, Lille, France. ⟨hal-04410887⟩

  • COMM

3D modeling of acoustic wave propagation and vibration in materials with contact acoustic nonlinearity

Vladislav Aleshin, Anton Pylypenko, Kevin Truyaert, Steven Delrue, Marina Terzi, Koen van den Abeele

7th International Congress on Ultrasonics, ICU 2019, Sep 2019, Bruges, Belgium. ⟨hal-03595011⟩

  • POSTER

MDAD: a multimodal and multiview in-vehicle driver action dataset

Imen Jegham, Anouar Ben Khalifa, Ihsen Alouani, Mohamed Ali Mahjoub

18th International Conference on Computer Analysis of Images and Patterns, CAIP 2019, Sep 2019, Salerno, Italy. ⟨hal-03582097⟩

  • COMM

Terahertz pulsed-field magneto-spectrometer at room-temperature

Jean-Francois Lampin, Antoine Pagies, S Barbieri, L. Desplanque, Xavier Wallart, Jeffrey Hesler, Oleksiy Drachenko, Jean Léotin

We have developed a compact pulsed-field THz magneto-spectrometer based on a THz molecular laser and heterodyne detection both at room-temperature. The recently developed continuous-wave THz laser uses mid-IR-pumped ammonia as active medium. The receiver is based on a subharmonic mixer pumped by a…

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-1, ⟨10.1109/IRMMW-THz.2019.8874540⟩. ⟨hal-03066230⟩

  • ART

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, V. Gao Zhan, Carlo de Santi, Riad Kabouche, Malek Zegaoui, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

We report on linearity and robustness of AlN/GaN HEMTs with ultra-thin 4 nm AlN barrier for millimeter wave range applications. Static and dynamic I-V characteristics feature high peak transconductance (g mpeak) of 385 mS/mm, and the transconductance exhibits small changes with gate bias. Semi on-…

Microelectronics Reliability, 2019, 100-101, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356749⟩

  • COMM

LT-GaAs-based photomixers with >2 mW peak output power up to 320 GHz

F Bavedila, Etienne Okada, Jean-Francois Lampin, Guillaume Ducournau, Emilien Peytavit

It is shown in this communication that a LT-GaAs photomixer based on an optically resonant cavity is able to generate peak output powers above 2 mW up to 320 GHz when it is driven by optical pulses of 5 ns width at a repetition rate of 10 MHz.

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. ⟨10.1109/IRMMW-THz.2019.8874037⟩. ⟨hal-02323311⟩