Publications

Affichage de 3961 à 3970 sur 16058


  • COMM

Silicon Based Diode Noise Source Scaling For Noise Measurement Up To 325 GHz

H. Ghanem, J-C. Azevedo-Goncalves, Sylvie Lepilliet, D. Gloria, Christophe Gaquière, Francois Danneville, Guillaume Ducournau

In this article, we investigate the use of silicon-based diode for millimeter-wave noise generation. A test bench setup was characterized to perform broadband noise measurements up to 325 GHz. A noise receiver is assembled and its Noise Figure (NF) was extracted using cryogenic Hot/Cold…

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873929⟩. ⟨hal-03115523⟩

  • COMM

Broadband terahertz heterodyne spectrometer exploiting synchrotron radiation at sub-megahertz resolution

O. Pirali, Z. Buchanan, Sophie Eliet, M.-A. Martin-Mel, J. Turut, Francis Hindle, P. Roy, Jean-Francois Lampin, Gaël Mouret

A new spectrometer on the AILES beamline of the SOLEIL synchrotron facility to achieve sub-MHz resolution in the THz and far-IR regions is currently being developed. Thanks to a dedicated heterodyne detection by use of a new kind of molecular laser as local oscillator along with a Fast Fourier…

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.965, ⟨10.1109/IRMMW-THz.2019.8874533⟩. ⟨hal-03089129⟩

  • COMM

Terahertz radiation confinement using metallic resonators

T. Hannotte, M. Lavancier, S. Mitryukovskiy, Jean-Francois Lampin, Romain Peretti

We designed, fabricated and characterized a micro-resonator in the terahertz range to increase light matter interaction using near-field optics. The goal of our device is to confine a THz electric field in a volume smaller than the diffraction limit to enhance light matter interaction with…

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873795⟩. ⟨hal-02615171⟩

  • COMM

A Suspended Silicon Terahertz platform with low loss waveguide and high Q Photonic Crystal cavities

Elias Akiki, Mattias Verstuyft, Guillaume Ducournau, Benjamin Walter, Estelle Mairiaux, Marc Faucher, Jean-Francois Lampin, Bart Kuyken, Mathias Vanwolleghem

A high Q optical resonator and ultra-low losses of a silicon suspended waveguide, are experimentally measured and presented, in order to demonstrate the working of a designed photoacoustic terahertz gas sensor presented in our previous work.

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-2, ⟨10.1109/IRMMW-THz.2019.8873957⟩. ⟨hal-03100266⟩

  • COMM

LT-GaAs-based photomixers with >2 mW peak output power up to 320 GHz

F Bavedila, Etienne Okada, Jean-Francois Lampin, Guillaume Ducournau, Emilien Peytavit

It is shown in this communication that a LT-GaAs photomixer based on an optically resonant cavity is able to generate peak output powers above 2 mW up to 320 GHz when it is driven by optical pulses of 5 ns width at a repetition rate of 10 MHz.

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. ⟨10.1109/IRMMW-THz.2019.8874037⟩. ⟨hal-02323311⟩

  • COMM

Terahertz pulsed-field magneto-spectrometer at room-temperature

Jean-Francois Lampin, Antoine Pagies, S Barbieri, L. Desplanque, Xavier Wallart, Jeffrey Hesler, Oleksiy Drachenko, Jean Léotin

We have developed a compact pulsed-field THz magneto-spectrometer based on a THz molecular laser and heterodyne detection both at room-temperature. The recently developed continuous-wave THz laser uses mid-IR-pumped ammonia as active medium. The receiver is based on a subharmonic mixer pumped by a…

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2019, Paris, France. pp.1-1, ⟨10.1109/IRMMW-THz.2019.8874540⟩. ⟨hal-03066230⟩

  • POSTER

Microstructure and Nanoscale Piezoelectric/Ferroelectric Properties in Ln<sub>2</sub>WO<sub>6</sub> (Ln = La and Nd) Thin Films Grown by Pulsed Laser Deposition on (001)-Oriented SrTiO<sub>3</sub> Substrates

Thomas Carlier, Marie-Hélène. Chambrier, Anthony Ferri, Antonio Da Costa, Manon Létiche, Florent Blanchard, Pascal Roussel, S. Estradé, G Martin, F. Peiro, Alain Cornet, Rachel Desfeux

  • ART

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, V. Gao Zhan, Carlo de Santi, Riad Kabouche, Malek Zegaoui, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

We report on linearity and robustness of AlN/GaN HEMTs with ultra-thin 4 nm AlN barrier for millimeter wave range applications. Static and dynamic I-V characteristics feature high peak transconductance (g mpeak) of 385 mS/mm, and the transconductance exhibits small changes with gate bias. Semi on-…

Microelectronics Reliability, 2019, 100-101, pp.113388. ⟨10.1016/j.microrel.2019.06.080⟩. ⟨hal-02356749⟩