Publications

Affichage de 4231 à 4240 sur 16117


  • Communication dans un congrès

WSN used in connected metro vehicles: RF leakages measurements

Ulrich Biaou, Michael Bocquet, Sara Iben Jellal, S. Baranowski

2ème Workshop « Technologies de l'Information et Communication - IoT pour une ville intelligente », IWITC 2019, Jul 2019, Villeneuve d'Ascq, France. ⟨hal-03574204⟩

  • Article dans une revue

Towards silicon-photonics based THz links?

Guillaume Ducournau, Cybelle Belem-Gonçalves, Cyril Luxey, Elsa Lacombe, Vincent Gidel, Cédric Durand, Frédéric Gianesello, Daniel Gloria

With the surge in mega-data communications, wireless networks are entering a revolution which has now taken off with 5G. From a user perspective, the main challenge is providing fast and agile connections in all usage scenarios. Considering the data-rates expected to be delivered to users (some…

Electronics Letters, 2019, 55 (14), pp.770-770. ⟨10.1049/el.2019.1913⟩. ⟨hal-03138561⟩

  • Communication dans un congrès

[Invited] Nano-antibiotics: A rational design of functional nanoparticles to combat bacterial infections

Rabah Boukherroub

ORCHID CONFERENCE 2019, Workshop Franco-Taiwanese, Jul 2019, Villeneuve d'Ascq, France. ⟨hal-04619257⟩

  • Communication dans un congrès

Real time fault detection on in-vehicle power line networks based on power line communication

Navish Lallbeeharry, Virginie Degardin, Pierre Degauque, Christophe Trebosc

Real time detection of intermittent or permanent faults which could appear on wired networks becomes a critical issue. Fault detection and localization methods are often based on reflectometry techniques but they need the implementation of dedicated devices. Furthermore, since they often use a wide…

2019 IEEE International Symposium on Measurements & Networking (M&N), Jul 2019, Catania, Italy. Session III - Network performance evaluation, optimization and troubleshooting, 5 p., ⟨10.1109/IWMN.2019.8805034⟩. ⟨hal-03514761⟩

  • Communication dans un congrès

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Riad Kabouche, Idriss Abid, Malek Zegaoui, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, F Medjdoub

Significant efforts are currently deployed in order to find optimum GaN-on-silicon epitaxial structuresenabling outstanding DC performances beyond 1 kV while delivering low trapping effects. We report on thedevelopment of GaN-on-silicon heterostructures, designed and manufactured by the company…

13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Seattle, United States. ⟨hal-03287421⟩