Publications

Affichage de 4281 à 4290 sur 16059


  • OTHER

Focus filière électronique

Virginie Hoel

Rendez-vous « Conseillez l’industrie ! » 2019, Paris, France, 22 mars, 2019. ⟨hal-03341281⟩

  • ART

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, Joff Derluyn, Stefan Degroote, Marianne Germain, Filip Gucmann, Callum Middleton, James W Pomeroy, Martin Kuball

In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance…

International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩

  • ART

Graphene-modified electrodes for sensing doxorubicin hydrochloride in human plasma

Fereshteh Chekin, Vladyslav Myshin, Ran Ye, Sorin Melinte, Santosh K Singh, Sreekumar Kurungot, Rabah Boukherroub, Sabine Szunerits

Analytical and Bioanalytical Chemistry, 2019, 411 (8), pp.1509-1516. ⟨10.1007/s00216-019-01611-w⟩. ⟨hal-02373226⟩

  • ART

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Mohammad A. Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière

Microelectronic Engineering, 2019, 209, pp.53-59. ⟨10.1016/j.mee.2019.03.011⟩. ⟨hal-03143596⟩