Publications

Affichage de 4651 à 4660 sur 16058


  • COMM

Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions

Petr Polovodov, Charlene Brillard, Olaf C Haenssler, Christophe Boyaval, D. Deresmes, Sophie Eliet, Fei Wang, Nicolas Clement, Didier Theron, Gilles Dambrine, Kamel Haddadi

Near-field scanning microwave microscopy (NSMM) is a scanning probe microscopy (SPM) technique that measures the local interaction of evanescent microwaves with a sample using a sharp tip probe. The traceability in NSMM is still challenging as the distribution of the electrical fields is affected…

2018 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), Aug 2018, Reykjavik, Iceland. pp.1-4, ⟨10.1109/NEMO.2018.8503487⟩. ⟨hal-02155769⟩

  • ART

Repeated photoporation with graphene quantum dots enables homogeneous labeling of live cells with extrinsic markers for fluorescence microscopy

Jing Liu, Ranhua Xiong, Toon Brans, Saskia Lippens, Eef Parthoens, Francesca Cella Zanacchi, Raffaella Magrassi, Santosh K Singh, Sreekumar Kurungot, Sabine Szunerits, Hannelore Bové, Marcel Ameloot, Juan Andrés A Fraire, Eline Teirlinck, Sangram Keshari Samal, Riet De Rycke, Gaëlle Houthaeve, Stefaan C de Smedt, Rabah Boukherroub, Kevin Braeckmans

In the replacement of genetic probes, there is increasing interest in labeling living cells with high-quality extrinsic labels, which avoid over-expression artifacts and are available in a wide spectral range. This calls for a broadly applicable technology that can deliver such labels unambiguously…

Light: Science and Applications, 2018, 7 (1), ⟨10.1038/s41377-018-0048-3⟩. ⟨hal-02375155⟩

  • COMM

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Farah Bouazzaoui, Marie Pierre Chauvat, Magali Morales, Malek Zegaoui, F Medjdoub, Piero Gamarra, Slawomir Kret, Pierre Ruterana

During the last years, the most significant improvement of the contact resistance forAlInN/GaN high electron mobility has been the use of a highly doped n+ GaN layer grown bymolecular beam epitaxy for the source and drain terminals. In a first report [1], the ohmiccontact processing was carried out…

International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland. ⟨hal-03287822⟩

  • OTHER

Pushing the limits of GaN-based power devices and power electronics

Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, Naundorf J., Martin R Rittner

2018, pp.52-55. ⟨hal-03287707⟩