Publications

Affichage de 4691 à 4700 sur 16232


  • Article dans une revue

Massless Dirac fermions in III-V semiconductor quantum wells

Sergey S. Krishtopenko, W. Desrat, K. Spirin, C. Consejo, S. Ruffenach, F. Gonzalez-Posada, Benoit Jouault, W. Knap, K. Maremyanin, V. Gavrilenko, G. Boissier, J. Torres, M. Zaknoune, E. Tournié, F. Teppe

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in…

Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩. ⟨hal-02072785⟩

  • Article dans une revue

Bond model of second-harmonic generation in wurtzite ZnO(0002) structures with twin boundaries

H Hardhienata, I Priyadi, H Alatas, Md Birowosuto, Philippe Coquet

Journal of the Optical Society of America B, 2019, 36 (4), pp.1127-1137. ⟨10.1364/JOSAB.36.001127⟩. ⟨hal-03091465⟩

  • Article dans une revue

Nanocarbons for Biology and Medicine: Sensing, Imaging, and Drug Delivery

N. Panwar, A.m. Soehartono, K.k. Chan, S.w. Zeng, G.x. Xu, J.l. Qu, Philippe Coquet, K.t. Yong, X.y. Chen

Chem. Rev., 2019, 119, pp.9559-9656. ⟨10.1021/acs.chemrev.9b00099⟩. ⟨hal-03091457⟩

  • Article dans une revue

The Influence of Microstructure on the Passive Layer Chemistry and Corrosion Resistance for Some Titanium-Based Alloys

Nader El-Bagoury, Sameh Ahmed, Ola Ahmed Abu Ali, Shimaa El-Hadad, Ahmed Fallatah, G. Mersal, Mohamed Ibrahim, Joanna Wysocka, Jacek Ryl, Rabah Boukherroub, Mohammed A. Amin

The effect of microstructure and chemistry on the kinetics of passive layer growth and passivity breakdown of some Ti-based alloys, namely Ti-6Al-4V, Ti-6Al-7Nb and TC21 alloys, was studied. The rate of pitting corrosion was evaluated using cyclic polarization measurements. Chronoamperometry was…

Materials, 2019, 12 (8), pp.1233. ⟨10.3390/ma12081233⟩. ⟨hal-02373220⟩

  • Chapitre d'ouvrage

Chapter 5 - Surface, interface, and confined slab magnons

L. Dobrzynski, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani

This chapter presents simple examples of surface, interface, and confined slab magnons. It addresses also magnetic surface reconstructions due to soft surface magnons. The influence of surface-pinning fields on the spin contribution to the thermodynamic properties of a ferromagnet is also presented…

Magnonics: interface transmission tutorial book series, Elsevier, pp.185-220, 2019, ISBN 978-0-12-813366-8 ; e-ISBN 978-0-12-813367-5. ⟨10.1016/B978-0-12-813366-8.00005-4⟩. ⟨hal-03356772⟩

  • Chapitre d'ouvrage

Chapter 3 - Magnon mono-mode circuits: serial loop structures

Housni Al-Wahsh, Abdellatif Akjouj, L. Dobrzynski, Bahram Djafari-Rouhani

In this chapter and in the frame of long-wavelength Heisenberg model, simple magnonic mono-mode circuits are designed to obtain transmission stop (pass) bands where the propagation of spin waves is forbidden (allowed). These simple devices are composed of infinite one-dimensional mono-mode…

Magnonics: interface transmission tutorial book series, Elsevier, pp.111-141, 2019, ISBN 978-0-12-813366-8 ; e-ISBN 978-0-12-813367-5. ⟨10.1016/B978-0-12-813366-8.00003-0⟩. ⟨hal-03356755⟩

  • Communication dans un congrès

HEAP: A heterogeneous approximate floating-point multiplier for error tolerant applications

Amira Guesmi, Ihsen Alouani, Mouna Baklouti, Tarek Frikha, Mohamed Abid, Atika Rivenq

Floating point arithmetic is one of the most commonly used units in nowadays computing systems and is deployed for a wide range of domains and applications. While floating point operators offer high precision calculations, a plethora of applications such as multimedia processing and machine…

30th International Workshop on Rapid System Prototyping: Shortening the Path from Specification to Prototype, RSP 2019, Oct 2019, New York, United States. pp.36-42, ⟨10.1145/3339985.3358495⟩. ⟨hal-03528688⟩

  • Article dans une revue

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its…

Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩