Publications

Affichage de 4751 à 4760 sur 16083


  • Article dans une revue

Quantum confinement effects in Pb nanocrystals grown on InAs

Tianzhen Zhang, Sergio Vlaic, Stéphane Pons, Alexandre Assouline, Alexandre Zimmers, Dimitri Roditchev, Hervé Aubin, Guy Allan, Christophe Delerue, Christophe David, Guillemin Rodary, Jean-Christophe Girard

In the recent work of Vlaic et al. [Nat. Commun. 8, 14549 (2017)], it has been shown that Pb nanocrystals grown on the electron accumulation layer at the (110) surface of InAs are in the regime of Coulomb blockade. This enabled a scanning tunneling spectroscopy study of the superconducting parity…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (21), ⟨10.1103/physrevb.97.214514⟩. ⟨hal-01921229⟩

  • Communication dans un congrès

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

Bilal Hassan, Adrien Cutivet, Ali Soltani, Christophe Rodriguez, François Boone, Hassan Maher, Meriem Bouchilaoun

The coumpoud semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310052⟩

  • Communication dans un congrès

Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices

Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso

For the first time, we demonstrate recombination-induced defect generation in InGaN/GaN-based optoelectronic devices, by stressing InGaN/GaN high periodicity MQW structures: the results will significantly improve the understanding of the degradation of LEDs, lasers and photodetectors, sinceso…

COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩

  • Communication dans un congrès

Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism

Marie-Clara Pépin, Hassan Maher, Christophe Rodriguez, Ali Soltani

The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310041⟩