Publications

Affichage de 5071 à 5080 sur 16082


  • Article dans une revue

High-Sensitivity Sensor Using C 60 -Single Molecule Transistor

Abdelghaffar Nasri, Aimen Boubaker, Bilel Hafsi, Wassim Khaldi, Adel Kalboussi

IEEE Sensors Journal, 2018, 18 (1), pp.248-254. ⟨10.1109/JSEN.2017.2769803⟩. ⟨hal-04422347⟩

  • Communication dans un congrès

Nano-structured top contact with low optical polarization dependence for THz generation using photodiodes

Sara Bretin, Maximilien Billet, Emilien Peytavit, Francois Vaurette, Christophe Coinon, X. Wallart, Jean-Francois Lampin, Malek Zegaoui, Guillaume Ducournau, Mohammed Zaknoune

Uni-travelling carrier photodiode (UTC-PD) with different top optical and electrical accesses are proposed towards optical polarization sensitivity reduction. With the optimized structure, only 1 percent dependence in optical polarization is obtained while ensuring good RF access. Measurements up…

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510466⟩. ⟨hal-03286176⟩

  • Article dans une revue

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite

Wenbing Peng, Tao Xu, Pascale Diener, Louis Biadala, Maxime Berthe, Xiaodong Pi, Yves Borensztein, Alberto Curcella, Romain Bernard, Geoffroy Prévot, B. Grandidier

The highly oriented pyrolytic graphite (HOPG) surface, consisting of a dangling bond-free lattice, is regarded as a potential substrate for van der Waals heteroepitaxy of two-dimensional layered materials. In this work, the growth of silicon and germanium on HOPG is investigated with scanning…

ACS Nano, 2018, 12 (5), pp.4754-4760. ⟨10.1021/acsnano.8b01467⟩. ⟨hal-03037862v2⟩

  • Communication dans un congrès

Characterization and Electrical Modeling Including Trapping Effects of AIN/GaN HEMT 4×50μm on Silicon Substrate

Mohamed Bouslama, Ahmad Al Hajjar, Raphaël Sommet, Jean-Christophe Nallatamby, F Medjdoub

This paper reports the full characterization and modeling of novel AlN/GaN HEMTs on silicon using a short gate length. This device has been optimized for high frequency analog circuits applications. The presented model includes DC and small-signal modeling steps taking into account the trapping…

13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.333-336, ⟨10.23919/EuMIC.2018.8539941⟩. ⟨hal-02356757⟩

  • Article dans une revue

Electronic Biosensing with Flexible Organic Transistor Devices

Caroline Kotlowski, Patrik Aspermair, Hadayat Ullah Khan, Ciril Reiner-Rozman, Josef Breu, Sabine Szunerits, Jang-Joo Kim, Zhenan Bao, Christoph Kleber, Paolo Pelosi, Wolfgang Knoll

In this short review, we summarize the design and implementation of organic semiconducting materials-based field-effect transistors (OFETs) and the fabrication and use of reduced graphene-oxide field-effect transistors (rGO–FETs) as flexible transducers for electronic biosensing. We demonstrate…

Flexible and Printed Electronics, 2018, 3 (3), pp.034003. ⟨10.1088/2058-8585/aad433⟩. ⟨hal-03185607⟩