Publications

Affichage de 5241 à 5250 sur 16083


  • Article dans une revue

Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Abderrahim Ramdane, Gilles Patriarche, Didier Decoster, El Hadj Dogheche

The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In x Ga 1-x N/GaN alloys deposited by metal-organic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In 0.1 Ga 0.9 N multiple quantum…

IEEE Photonics Journal, 2017, 9 (4), pp.6803006. ⟨10.1109/JPHOT.2017.2714168⟩. ⟨hal-03552276⟩

  • Communication dans un congrès

Acceleration of macroscopic contact line of a droplet spreading on a substrate induced by interaction with a fixed particle

Lizhong Mu, Daichi Kondo, Motochika Inoue, Hiroki Himeda, Jumpei Fukushima, Harunori Yoshikawa, Farzam Zoueshtiagh, Toshihiro Kaneko, Ichiro Ueno

3rd International Conference on Droplets, Jul 2017, Los Angeles, United States. ⟨hal-01570028⟩

  • Communication dans un congrès

Substrate grounded GaN-on-Si HEMTs with record vertical breakdown above 2 kV

Ezgi Dogmus, Astrid Linge, Malek Zegaoui, F Medjdoub

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298876⟩

  • Communication dans un congrès

Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities

C de Santi, M Meneghini, A Caria, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, G Meneghesso, E Zanoni

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298878⟩

  • Poster de conférence

Design and simulation of InGaN/GaN p-i-n photodiodes

Mourad Elbar, Bandar Alshehri, Souad Tobbeche, El Hadj Dogheche

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. 2018. ⟨hal-03552772⟩

  • Poster de conférence

Frequency measurement using noise setup for III-nitrides based photodiode

Bandar Alshehri, Karim Dogheche, Abderrahim Ramdane, Didier Decoster, El Hadj Dogheche

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. ⟨hal-03549720⟩

  • Communication dans un congrès

Characterization and modeling of transient self-heating in GaN HEMTs

Adrien Cutivet, Meriem Bouchilaoun, Ahmed Chakroun, Ali Soltani, Abdelatif Jaouad, François Boone, Hassan Maher

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-02310127⟩