Publications

Affichage de 5321 à 5330 sur 16164


  • Article dans une revue

MoS2/TiO2/SiNW surface as an effective substrate for LDI-MS detection of glucose and glutathione in real samples

Abderrahmane Hamdi, Ioana Silvia Hosu, Ahmed Addad, Ruben Hartkoorn, Hervé Drobecq, Oleg Melnyk, Hatem Ezzaouia, Rabah Boukherroub, Yannick Coffinier

Talanta, 2017, 171, pp.101-107. ⟨10.1016/j.talanta.2017.04.061⟩. ⟨hal-02133897⟩

  • Article dans une revue

Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Abderrahim Ramdane, Gilles Patriarche, Didier Decoster, El Hadj Dogheche

The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In x Ga 1-x N/GaN alloys deposited by metal-organic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In 0.1 Ga 0.9 N multiple quantum…

IEEE Photonics Journal, 2017, 9 (4), pp.6803006. ⟨10.1109/JPHOT.2017.2714168⟩. ⟨hal-03552276⟩

  • Communication dans un congrès

Acceleration of macroscopic contact line of a droplet spreading on a substrate induced by interaction with a fixed particle

Lizhong Mu, Daichi Kondo, Motochika Inoue, Hiroki Himeda, Jumpei Fukushima, Harunori Yoshikawa, Farzam Zoueshtiagh, Toshihiro Kaneko, Ichiro Ueno

3rd International Conference on Droplets, Jul 2017, Los Angeles, United States. ⟨hal-01570028⟩

  • Communication dans un congrès

Characterization and modeling of transient self-heating in GaN HEMTs

Adrien Cutivet, Meriem Bouchilaoun, Ahmed Chakroun, Ali Soltani, Abdelatif Jaouad, François Boone, Hassan Maher

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-02310127⟩

  • Poster de conférence

Study of Zn(Sn,Ge)N2 for optoelectronic applications

N. Fèvre, Nathaniel Feldberg, Patrice Miska, El Hadj Dogheche, C. Licitra, Bérangère Hyot, A. Roule

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. ⟨hal-03553042⟩

  • Communication dans un congrès

The effect of waveguide parameters on gan based S-bend Y-junction optical power divider

Retno Wigajatri Purnamaningsih, N.R. Poespawati, Tomy Abuzairi, Sasono Rahardjo, Maratul Hamidah, El Hadj Dogheche

GaN-based structures have attracted many researchers in developing photonic devices. These semiconductor structures can operate at high temperatures and high-power levels due to their mechanical hardness. So far, optical splitters design based on Y-junction splitters are widely used on the various…

2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering, Jul 2017, Nusa Dua, Indonesia. pp.353-356, 978-1-5090-6398-7, ⟨10.1109/QIR.2017.8168510⟩. ⟨hal-03560792⟩