Publications

Affichage de 5551 à 5560 sur 16075


  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

  • Article dans une revue

Interview: Joseph Agassi

Mauro Condé, Raffaele Pisano, Michael Segre

Joseph Agassi is an Israeli scholar born in Jerusalem on May 7, 1927. He has many books and articles published contributing to the fields of logic, scientific method, foundations of sciences, epistemology and, most importantly for this Journal, in the historiography of science. He studied with Karl…

Transversal: International Journal for the Historiography of Science, 2016, 1 (1), pp.116-119. ⟨10.24117/2526-2270.2016.i1.13⟩. ⟨hal-04509353⟩

  • Article dans une revue

Running Details on the Two Movements in the Intellectual History of Science and Ideas [Editorial]

Raffaele Pisano

Journal of Baltic Science Education, 2016, 15 (6), pp.660-661. ⟨10.33225/jbse/16.15.660⟩. ⟨hal-04509342⟩