Publications

Affichage de 5631 à 5640 sur 16164


  • Article dans une revue

Capacity analysis of an IEEE 802.11n system in a residential house based on estimated specular and dense multipath components

Emmeric Tanghe, Davy Gaillot, David Plets, Wout Joseph, M. Lienard, Wim de Ketelaere, Luc Martens

IET Microw. Antennas Propag., 2017, 11, pp.1671-1675. ⟨10.1049/iet-map.2016.0798⟩. ⟨hal-03346238⟩

  • Communication dans un congrès

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, M. Fryziel, Nathalie Rolland, Afshin Ziaei

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction.…

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩

  • Communication dans un congrès

A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm

Simon Bouvot, Joao Carlos Azevedo Goncalves, Alice Bossuet, Thomas Quemerais, Sylvie Lepilliet, Guillaume Ducournau, Francois Danneville, Daniel Gloria

A millimeter-wave active impedance tuner is implemented on the STMicroelectronics BiCMOS 55 nm technology for in-situ noise characterization. The presented circuit is composed of a two stage low noise amplifier with a gain of 11 dB and a NF of 7.5 dB at 150 GHz loading a 64 states passive impedance…

IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Aug 2017, Seoul, South Korea. paper FR_3B_4, ⟨10.1109/RFIT.2017.8048233⟩. ⟨hal-03272701⟩