Publications

Affichage de 5641 à 5650 sur 16179


  • Communication dans un congrès

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, M. Fryziel, Nathalie Rolland, Afshin Ziaei

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction.…

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩

  • Communication dans un congrès

A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm

Simon Bouvot, Joao Carlos Azevedo Goncalves, Alice Bossuet, Thomas Quemerais, Sylvie Lepilliet, Guillaume Ducournau, Francois Danneville, Daniel Gloria

A millimeter-wave active impedance tuner is implemented on the STMicroelectronics BiCMOS 55 nm technology for in-situ noise characterization. The presented circuit is composed of a two stage low noise amplifier with a gain of 11 dB and a NF of 7.5 dB at 150 GHz loading a 64 states passive impedance…

IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Aug 2017, Seoul, South Korea. paper FR_3B_4, ⟨10.1109/RFIT.2017.8048233⟩. ⟨hal-03272701⟩

  • Article dans une revue

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, A. Vivier, Christophe Gaquière, B. Boudart

Solid-State Electronics, 2017, 127, pp.13 - 19. ⟨10.1016/j.sse.2016.10.039⟩. ⟨hal-01646143⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩