Publications

Affichage de 5691 à 5700 sur 16100


  • Article dans une revue

Antifouling biomimetic liquid-infused stainless steel: application to rairy industrial processing

Sawsen Zouaghi, Thierry Six, Séverine Bellayer, Sona Moradi, Savvas G. Hatzikiriakos, Thomas Dargent, V. Thomy, Yannick Coffinier, Christophe Andre, Guillaume Delaplace, Maude Jimenez

Fouling is a widespread and costly issue, faced by all food-processing industries. Particularly, in the dairy sector, where thermal treatments are mandatory to ensure product safety, heat-induced fouling represents up to 80% of the total production costs. Significant environmental impacts, due the…

ACS Applied Materials & Interfaces, 2017, 9 (31), pp.26565-26573. ⟨10.1021/acsami.7b06709⟩. ⟨hal-02622108⟩

  • Article dans une revue

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, A. Vivier, Christophe Gaquière, B. Boudart

Solid-State Electronics, 2017, 127, pp.13 - 19. ⟨10.1016/j.sse.2016.10.039⟩. ⟨hal-01646143⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

  • Article dans une revue

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Stéphane Lenfant, Yannick Viero, Christophe Krzeminski, Dominique Vuillaume, Dora Demeter, I. L. Dobra, Maiténa Oçafrain, Philippe Blanchard, Jean Roncali, C. van Dick, Jérôme Cornil

We report the electron-transport properties of a new photoaddressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and, hence, the electronic properties of an oligothiophene chain can be reversibly modified by…

Journal of Physical Chemistry C, 2017, 121 (22), pp.12416-12425. ⟨10.1021/acs.jpcc.7b01240⟩. ⟨hal-02564470⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩