Publications

Affichage de 5811 à 5820 sur 16385


  • Communication dans un congrès

A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm

Simon Bouvot, Alice Bossuet, Thomas Quémerais, Guillaume Ducournau, Francois Danneville, Estelle Lauga-Larroze, Daniel Gloria, Jean-Michel Fournier, Christophe Gaquière

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, United States. pp.103-106. ⟨hal-02012861⟩

  • Communication dans un congrès

A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS

Walid Aouimeur, José Moron Guerra, Ayssar Serhan, Sylvie Lepilliet, Thomas Quémerais, Daniel Gloria, Estelle Lauga-Larroze, Jean-Daniel Arnould, Christophe Gaquière

In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines in G band is presented and analyzed. The experimental results of the frequency doubler exhibit at 174 GHz a peak output power of +2 dBm associate with a linear conversion…

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan 2017, Phoenix, AZ, United States. pp.60-63, ⟨10.1109/SIRF.2017.7874371⟩. ⟨hal-02012682⟩

  • Ouvrages

Functionalized Nanomaterials for the Management of Microbial Infection: A Strategy to Address Microbial Drug Resistance

Rabah Boukherroub, Sabine Szunerits, Djamel Drider

2017, 032341625X. ⟨hal-04549110⟩

  • Article dans une revue

Nonlinear secondary noise sources for passive defect detection using ultrasound sensors

Lynda Chehami, Emmanuel Moulin, Julien de Rosny, Claire Prada, Eric Chatelet, Giovanna Lacerra, Konstantinos Gryllias, Francesco Massi

This paper introduces the concept of secondary noise sources for passive defect detection and localization in structures. The proposed solution allows for the exploitation of the principle of Green's function reconstruction from noise correlation, even in the absence of an adequate ambient…

Journal of Sound and Vibration, 2017, 386, pp.283 - 294. ⟨10.1016/j.jsv.2016.10.006⟩. ⟨hal-01835485⟩

  • Brevet

Substrat microstructuré

Christophe Lethien, Pascal Tilmant, Etienne Eustache, Nathalie Rolland, Thierry Brousse

Japon, N° de brevet: JP2017500211 (A) 2017-01-05. 2017, N° de priorité : FR20130059717 20131007 - N° de demande : JP20160520666 20141002. ⟨hal-05661705⟩

  • Article dans une revue

Thermal conductivity of glassy GeTe4 by first-principles molecular dynamics

Assil Bouzid, Hayat Zaoui, Pier Luca Palla, Guido Ori, Mauro Boero, Carlo Massobrio, Fabrizio Cleri, Évelyne Martin

A transient thermal regime is achieved in glassy GeTe4 by first-principles molecular dynamics following the recently proposed “approach-to-equilibrium” methodology. The temporal and spatial evolution of the temperature do comply with the time-dependent solution of the heat equation. We demonstrate…

Physical Chemistry Chemical Physics, 2017, 19 (15), pp.9729-9732. ⟨10.1039/c7cp01063j⟩. ⟨hal-02349381⟩

  • Communication dans un congrès

Graphene field effect transistors with optimized contact resistance for current gain

W. Wei, D. D. Fazio, U. Sassi, A. C. Ferrari, E. Pallecchi, H. Happy

75th Annual Device Research Conference, DRC 2017, Jun 2017, South Bend, IN, USA, United States. pp.1-2, ⟨10.1109/DRC.2017.7999420⟩. ⟨hal-03335834⟩

  • Article dans une revue

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

Steven Duffy, Brahim Benbakhti, Maghnia Mattalah, Wei Zhang, Meriem Bouchilaoun, Mohammed Boucherta, Karol Kalna, Nour Eddine Bourzgui, Maher, Hassan, Ali Soltani

An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer…

ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040 - S3043. ⟨10.1149/2.0111711jss⟩. ⟨hal-01914382⟩