Publications

Affichage de 5891 à 5900 sur 16440


  • Article dans une revue

Theoretical and experimental study of a thermal damper based on a CNT/PCM composite structure for transient electronic cooling

Christophe Kinkelin, Stéphane Lips, Ulrich Soupremanien, Vincent Remondière, Jean Dijon, Hélène Le Poche, Emmanuel Ollier, Malek Zegaoui, Nathalie Rolland, Paul-Alain Rolland, Sandrine Lhostis, Brigitte Descouts, Yann Kaplan, Frédéric Lefèvre

The present study focuses on a thermal damper that aims at smoothing the temperature peaks experienced by electronic components during transient solicitations. It consists of a silicon casing containing a densified or undensified carbon nanotube (CNT) array - linking directly both sides of the…

Energy Conversion and Management, 2017, 142, pp.257-271. ⟨10.1016/j.enconman.2017.03.034⟩. ⟨hal-01494833⟩

  • Article dans une revue

International Summer School, Lille Report

Raffaele Pisano

Viewpoint, 2017, 110 (6), pp.13-14. ⟨hal-04509329⟩

  • Article dans une revue

Thermal conductivity of glassy GeTe4 by first-principles molecular dynamics

Assil Bouzid, Hayat Zaoui, Pier Luca Palla, Guido Ori, Mauro Boero, Carlo Massobrio, Fabrizio Cleri, Évelyne Martin

A transient thermal regime is achieved in glassy GeTe4 by first-principles molecular dynamics following the recently proposed “approach-to-equilibrium” methodology. The temporal and spatial evolution of the temperature do comply with the time-dependent solution of the heat equation. We demonstrate…

Physical Chemistry Chemical Physics, 2017, 19 (15), pp.9729-9732. ⟨10.1039/c7cp01063j⟩. ⟨hal-02349381⟩

  • Communication dans un congrès

Graphene field effect transistors with optimized contact resistance for current gain

W. Wei, D. D. Fazio, U. Sassi, A. C. Ferrari, E. Pallecchi, H. Happy

75th Annual Device Research Conference, DRC 2017, Jun 2017, South Bend, IN, USA, United States. pp.1-2, ⟨10.1109/DRC.2017.7999420⟩. ⟨hal-03335834⟩

  • Article dans une revue

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

Steven Duffy, Brahim Benbakhti, Maghnia Mattalah, Wei Zhang, Meriem Bouchilaoun, Mohammed Boucherta, Karol Kalna, Nour Eddine Bourzgui, Maher, Hassan, Ali Soltani

An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer…

ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040 - S3043. ⟨10.1149/2.0111711jss⟩. ⟨hal-01914382⟩