Publications

Affichage de 6121 à 6130 sur 16109


  • Communication dans un congrès

High frequency high breakdown voltage GaN transistors

F Medjdoub, Nicolas Herbecq, Astrid Linge, Malek Zegaoui

In this work, high performance ultrathin barrier GaN devices for high frequency applications are presented. In particular, key features to achieve significant breakdown voltages and high robustness while using sub-10 nm barrier thickness are discussed. It is shown that the thickness of the in-situ…

2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.9.2.1-9.2.4, ⟨10.1109/IEDM.2015.7409660⟩. ⟨hal-03028447⟩

  • Article dans une revue

TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect

B. Hafsi, Aïmen Boubaker, Naoufel Ismaïl, Adel Kalboussi, Kamal Lmimouni

Journal of the Korean Physical Society, 2015, 67 (7), pp.1201-1207. ⟨10.3938/jkps.67.1201⟩. ⟨hal-04422395⟩

  • Article dans une revue

Taming the degeneration of Bessel beams at anisotropic-isotropic interface: toward three-dimensional control of confined vortical waves

Antoine Riaud, Jean-Louis Thomas, Michael Baudoin, Olivier Bou Matar

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2015, 92, pp.063201. ⟨10.1103/PhysRevE.92.063201⟩. ⟨hal-01310356⟩