Publications

• Article dans une revue

Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air

Nitin Goyal, Srujana Dusari, Jochen Bardong, F Medjdoub, Andreas Kenda, Alfred Binder

In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of…

Solid-State Electronics, 2016, 116, pp.107-110. ⟨10.1016/j.sse.2015.12.002⟩. ⟨hal-03028357⟩

• Communication dans un congrès

A practical method for improving mobile devices trajectory estimation via MEMs accelerometers

K. Saidi, Marie Zwingelstein, Ali Khanafer, M. Asmani, Sébastien Grondel

The challenging research area of locating a mobile device has gained interest in recent years with the emergence of wireless sensor networks (WSN) as well as of low-cost sensors based on micro-electromechanical systems (MEMS). This paper focuses on the dead reckoning (DR) algorithm which doubly…

11th France-Japan Congress / 9th Europe-Asia Congress on Mechatronics (MECATRONICS) / 17th International Conference on Research and Education in Mechatronics (REM), Jun 2016, Compiegne, France. paper CD-000914, 103-110. ⟨hal-03280241⟩

• Article dans une revue

In-flow detection of ultra-small magnetic particles by an integrated giant magnetic impedance sensor

Kamel Fodil, Matthieu Denoual, Christophe Dolabdjian, A. Treizebre, Vincent Senez

Applied Physics Letters, 2016, ⟨10.1063/1.4948286⟩. ⟨hal-01417815⟩

• Article dans une revue

High photocatalytic activity of plasmonic Ag@AgCl/Zn2 SnO4 nanocomposites synthesized using hydrothermal method

Monaam Ben Ali, Abderrahmane Hamdi, Habib Elhouichet, Brigitte Sieber, Ahmed Addad, Yannick Coffinier, Luc Boussekey, Mokhtar Férid, Sabine Szunerits, Rabah Boukherroub

Ag@AgCl/Zn 2 SnO 4 (ZTO) nanocomposites were successfully prepared by a hydrothermal method.

RSC Advances, 2016, 6 (83), pp.80310-80319. ⟨10.1039/C6RA14813A⟩. ⟨hal-03837468⟩

• Communication dans un congrès

Development of a reference wafer for on-wafer testing of extreme impedance devices

H. Votsi, I. Roch-Jeune, Kamel Haddadi, C. Li, Gilles Dambrine, P. H. Aaen, N. Ridler

This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in…

88th ARFTG Microwave Measurement Symposium, ARFTG 2016, Dec 2016, Austin, United States. 4 p., ⟨10.1109/ARFTG.2016.7839719⟩. ⟨hal-03224658⟩

• Communication dans un congrès

New Optical Approach of SAW Delay Line Characterization

Lyes Djoumi, Nikolay Smagin, Meddy Vanotti, Dame Fall, Etienne Herth, Marc Duquennoy, Mohammadi Ouaftouh, Virginie Blondeau-Patissier, Frédéric Jenot

Surface acoustic wave devices are usually characterized solely through their electrical parameters. Mechanical displacements can also be numerically computed using finite element software. In this paper, we show that this characterization can be supplemented using an interferometer system capable…

30th Eurosensors Conference, EUROSENSORS XXX, Sep 2016, Budapest, Hungary. pp.838-843. ⟨hal-03586205⟩

• Article dans une revue

Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Chris Bishop, Yacine Halfaya, Ali Soltani, Suresh Sundaram, Xin Li, Jérémy Streque, Youssef El Gmili, Paul B Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden

We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100°C-400°C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved…

IEEE Sensors Journal, 2016, 16 (18), pp.6828-6838. ⟨10.1109/JSEN.2016.2593050⟩. ⟨hal-02385234⟩

• Article dans une revue

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

K.K. Sossoe, Corentin Durand, L. Mathey, T. Alphazan, A. Sylla, M.M. Dzagli, A. Mohou, J.P. Nys, Maxime Berthe, C. Thieuleux, C. Coperet, J.P. Barnes, B. Grandidier

Microelectronic Engineering, 2016, 149, pp.125-128. ⟨10.1016/j.mee.2015.10.002⟩. ⟨hal-02084763⟩

• Article dans une revue

Combining combing and secondary ion mass spectrometry to study DNA on chips using ¹³C and ¹⁵N labeling

Armelle Cabin-Flaman, Anne-Francoise Monnier, Yannick Coffinier, Jean-Nicolas Audinot, David Gibouin, Tom Wirtz, Rabah Boukherroub, Henri-Noël Migeon, Aaron Bensimon, Laurent Jannière, Camille Ripoll, Victor Norris

Dynamic secondary ion mass spectrometry ( D-SIMS) imaging of combed DNA - the combing, imaging by SIMS or CIS method - has been developed previously using a standard NanoSIMS 50 to reveal, on the 50 nm scale, individual DNA fibers labeled with different, non-radioactive isotopes in vivo and to…

• Communication dans un congrès

Graphene field effect transistors on flexible substrate : stable process and high RF performance

Wei Wei, Emiliano Pallecchi, Mohamed Moez Belhaj, Alba Centeno, Amaia Zurutuza, Dominique Vignaud, Henri Happy

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 mu m and 24 mu m) were successfully fabricated on Kapton substrate. We report asmeasured…

11th European Microwave Integrated Circuits Conference, EuMIC 2016, Oct 2016, London, United Kingdom. pp.165-168, ⟨10.1109/EuMIC.2016.7777516⟩. ⟨hal-03335833⟩